基于准二维钙钛矿的高稳定电阻随机存储器
Strongly stable resistive random access memory based on quasi-two-dimensional perovskites
陈享 1潘孝鑫 1蒋博闻 1危家昀 1龙研 1汤杰 1李晓庆 1张军 2段金霞 2桃李 2马国坤 2王浩2
作者信息
- 1. Institute of Microelectronics and Integrated Circuits,School of Microelectronics,Hubei University,Wuhan 430062,China
- 2. Institute of Microelectronics and Integrated Circuits,School of Microelectronics,Hubei University,Wuhan 430062,China;Hubei Yangtze Memory Laboratories,Wuhan 430205,China
- 折叠
摘要
电阻式随机存储器(RRAM)一直被视为新兴存储器技术中具有挑战性的替代品.近年来,人们发现基于有机-无机杂化卤化物钙钛矿的RRAM具有优异的存储特性.本研究利用简单的一步旋涂策略,在空气中不使用反溶剂,制备出了具有准二维钙钛矿活性层的Al/(PEA)2-MAPb2I3Br4/SnO2/氧化铟锡(ITO)非易失性RRAM,该器件表现出了出色且高度稳定的双极性电阻切换特性.此外,该器件表现出约为104的开/关比,低SET电压(约0.8 V),并且具有相对稳定的耐久性(大于1000次循环).高阻态和低阻态的传导机制分别是空间电荷限流传导和欧姆传导.此外,由于苯乙胺分子的疏水性,该器件在40％湿度下放置90天依然表现出显著的阻变特性.因此,这种高性能、稳定的RRAM为未来存储器的商业化提供了可能性.
Abstract
Resistive random access memory(RRAM)has been regarded as a challenging alternative for emerging memory technologies.In recent years,organic-inorganic hy-brid halide prerovskite-based RRAMs have been found to have superior storage properties.In this work,an Al/(PEA)2-MAPb2I3Br4/SnO2/indium tin oxide nonvolatile RRAM de-monstrated outstanding and highly stable bipolar resistance switching characteristics,which was prepared with a quasi-two-dimensional perovskite active layer using a simple one-step spin-casting strategy in air without antisolvent.In addi-tion,the device showed an on/off ratio of approximately 104,a low set voltage(～0.8 V),and a relatively stable endurance(＞1000 cycles).The conduction mechanisms of the high-and low-resistance states were space-charge-limited-current con-duction and Ohmic conduction,respectively.Moreover,owing to the hydrophobicity of the phenethylamine molecule,the device exhibited notable resistive characteristics at 40％hu-midity for more than 90 days.Thus,this high-performance and stable RRAM offers unlimited prospects for future memory commercialization.
关键词
resistive random access memory/organic-inorganic hybrid/quasi-two-dimensional/high stabilityKey words
resistive random access memory/organic-inorganic hybrid/quasi-two-dimensional/high stability引用本文复制引用
基金项目
湖北省自然科学基金(2022CFB402)
Science and Technology Major Project of Wuhan(2021012002023423)
Science and Technology Major Project of Hubei(2022AEA001)
出版年
2024
NETL
NSTL
万方数据