全氧化镓薄膜同质p-n结
Full β-Ga2O3 films-based p-n homojunction
翟泓超 1刘晨星 1吴征远 2马聪聪 1田朋飞 1万景 1康俊勇 3褚君浩 4方志来2
作者信息
- 1. Academy for Engineering and Technology,and School of Information Science and Technology,Fudan University,Shanghai 200433,China
- 2. Academy for Engineering and Technology,and School of Information Science and Technology,Fudan University,Shanghai 200433,China;Institute of Optoelectronics,Fudan University,Shanghai 200433,China
- 3. Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices,Department of Physics,Xiamen University,Xiamen 361005,China
- 4. Institute of Optoelectronics,Fudan University,Shanghai 200433,China
- 折叠
摘要
制备p-n结以及探索其物理机制在发展各种功能器件和推进其实际应用中起到关键作用.超宽禁带半导体在制备高压高频器件上有着巨大的潜力,但是氧化镓P型掺杂困难限制了氧化镓同质p-n结的制备,进而阻碍了全氧化镓基双极型器件的发展.本文通过一种先进的相转变生长技术结合溅射镀膜的方法,成功制备了n型锡掺杂β相氧化镓/P型氮掺杂β相氧化镓薄膜.本工作成功制作了全氧化镓单边突变同质p-n结二极管,并且详细分析了器件机理.该二极管实现了4 × 104的整流比、在40V下9.18 mΩ cm2的低导通电阻、4.41 V的内建电势和1.78的理想因子,并在交流电压下表现出没有过冲的整流特性以及长期稳定性.本工作为氧化镓同质p-n结初窥门径,为氧化镓同质双极型器件奠定了基础,为高压高功率器件的应用开创了道路.
Abstract
Fabricating the p-n junction and exploring the device physics play key roles in developing various functional devices and promoting their practical applications.Although ultrawide bandgap semiconductors have great potentials to fabricate high-voltage and high-efficiency power devices,the lack of p-type Ga2O3 poses a fundamental obstacle for fabri-cating the Ga2O3 p-n homojunction and impedes the devel-opment of full Ga2O3-based bipolar devices.In this study,n-type Sn-doped β-Ga2O3/p-type N-doped β-Ga2O3 films are prepared by a novel phase-transition growth technique com-bined with sputter deposition.Full β-Ga2O3 one-sided abrupt p-n homojunction diodes are fabricated and the device physics are explored in detail.The diodes possess a high rectification ratio of 4 × 104,a low specific on-resistance of 9.18 mΩ cm2 at 40 V,a built-in potential of 4.41 V,and an ideal factor of 1.78,and also show a good rectification behavior under alternating voltage with no overshoot and longterm stability.Our results clear away the major obstacle to β-Ga2O3 p-n homojunction,lay the foundation for β-Ga2O3 homogeneous bipolar devices,and pave the way for the evolution of high-voltage and high-power device applications.
关键词
gallium oxide/p-n junction/forward characteristics/rectification ratio/specific on-resistanceKey words
gallium oxide/p-n junction/forward characteristics/rectification ratio/specific on-resistance引用本文复制引用
基金项目
国家重点研发计划(2022YFB3605500)
国家重点研发计划(2022YFB3605503)
国家自然科学基金(62074039)
国家自然科学基金(12004074)
中国博士后科学基金(2020M681141)
National Postdoctoral Program for Innovative Talents(BX20190070)
出版年
2024
NETL
NSTL
万方数据