用于EUV图案化的新型氧化锌簇交联策略的辐射化学
Radiation chemistry of a novel zinc-oxo cluster crosslinking strategy for EUV patterning
司友明 1周丹红 1赵俊 2彭译锋 1陈鹏忠 1樊江莉 1彭孝军1
作者信息
- 1. State Key Laboratory of Fine Chemicals,Frontiers Science Centre for Smart Materials Oriented Chemical Engineering,School of Chemical Engineering,Dalian University of Technology,Dalian 116024,China
- 2. Shanghai Synchrotron Radiation Facility,Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201204,China
- 折叠
摘要
由于C=C双键交联反应机制的成熟,金属氧化物光刻胶得到了广泛的发展.然而,由于不稳定的C=C双键,这种材料需要低温和遮光存储.在此,首次在金属氧簇中提出了 C-F键交联策略用于光刻图案化.以光刻胶Zn-TBA为例,它形成光滑无缺陷的薄膜,且表面粗糙度Rq小于0.2 nm.使用极紫外(EUV)干涉掩模,在65 mJ cm-2曝光剂量下形成37.5 nm的半周期(HP)图案.在EUV曝光和正己烷显影后,通过原子力显微镜(AFM)观察到负性光刻胶形貌.重要的是,Zn-TBA可以在室温和明亮的环境中储存.除了脱羧之外,我们还提出光引发的C-F交联是Zn-TBA图案的主要贡献者,并通过高分辨率X射线光电子能谱(HRXPS)和密度泛函理论(DFT)计算得以证明.这种新颖的光刻机制为下一代金属基材料的设计提供了新的思路.
Abstract
Metal oxide-based photoresists are extensively developed due to the mature mechanism of C=C double bond crosslinking reaction.However,such materials require low-temperature and light-shielded storage due to unstable C=C double bond.Herein,the C-F bond crosslinking strategy was first proposed in metal-oxo clusters for lithography pattern-ing.Take the photoresist Zn-TBA for example,it could form smooth and defect-free thin films with the surface roughness Rq being smaller than 0.2 nm.With an Extreme ultraviolet interference mask,the patterns could be resolved into 37.5-nm half-pitch at 65 mJ cm-2.After being exposed and developed with n-hexane,a negative tone image was observed,and the prominent patterns morphology was confirmed by an atomic force microscope.Importantly,Zn-TBA could be stored at room temperature and bright environment.Besides dec-arboxylation,we proposed that photoinitiated C-F cross-linking was a major contributor to Zn-TBA patterns,which was convinced by high-resolution X-ray photoelectron spectra and theoretical density functional theory calculations.The novel lithographic mechanism provides excellent insight for the next generation of metal-based materials design.
关键词
zinc-oxo cluster/C-F crosslinking/extreme ultra-violet lithography/radiation chemistry/lithography mechanismKey words
zinc-oxo cluster/C-F crosslinking/extreme ultra-violet lithography/radiation chemistry/lithography mechanism引用本文复制引用
基金项目
National Natural Science Foundation of China(21925802)
National Natural Science Foundation of China(22338005)
Liaoning Binhai Laboratory(LBLB-2023-03)
Fundamental Research Funds for the Central Universities(DUT22LAB601)
出版年
2024
NETL
NSTL
万方数据