首页|用于EUV图案化的新型氧化锌簇交联策略的辐射化学

用于EUV图案化的新型氧化锌簇交联策略的辐射化学

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由于C=C双键交联反应机制的成熟,金属氧化物光刻胶得到了广泛的发展.然而,由于不稳定的C=C双键,这种材料需要低温和遮光存储.在此,首次在金属氧簇中提出了 C-F键交联策略用于光刻图案化.以光刻胶Zn-TBA为例,它形成光滑无缺陷的薄膜,且表面粗糙度Rq小于0.2 nm.使用极紫外(EUV)干涉掩模,在65 mJ cm-2曝光剂量下形成37.5 nm的半周期(HP)图案.在EUV曝光和正己烷显影后,通过原子力显微镜(AFM)观察到负性光刻胶形貌.重要的是,Zn-TBA可以在室温和明亮的环境中储存.除了脱羧之外,我们还提出光引发的C-F交联是Zn-TBA图案的主要贡献者,并通过高分辨率X射线光电子能谱(HRXPS)和密度泛函理论(DFT)计算得以证明.这种新颖的光刻机制为下一代金属基材料的设计提供了新的思路.
Radiation chemistry of a novel zinc-oxo cluster crosslinking strategy for EUV patterning
Metal oxide-based photoresists are extensively developed due to the mature mechanism of C=C double bond crosslinking reaction.However,such materials require low-temperature and light-shielded storage due to unstable C=C double bond.Herein,the C-F bond crosslinking strategy was first proposed in metal-oxo clusters for lithography pattern-ing.Take the photoresist Zn-TBA for example,it could form smooth and defect-free thin films with the surface roughness Rq being smaller than 0.2 nm.With an Extreme ultraviolet interference mask,the patterns could be resolved into 37.5-nm half-pitch at 65 mJ cm-2.After being exposed and developed with n-hexane,a negative tone image was observed,and the prominent patterns morphology was confirmed by an atomic force microscope.Importantly,Zn-TBA could be stored at room temperature and bright environment.Besides dec-arboxylation,we proposed that photoinitiated C-F cross-linking was a major contributor to Zn-TBA patterns,which was convinced by high-resolution X-ray photoelectron spectra and theoretical density functional theory calculations.The novel lithographic mechanism provides excellent insight for the next generation of metal-based materials design.

zinc-oxo clusterC-F crosslinkingextreme ultra-violet lithographyradiation chemistrylithography mechanism

司友明、周丹红、赵俊、彭译锋、陈鹏忠、樊江莉、彭孝军

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State Key Laboratory of Fine Chemicals,Frontiers Science Centre for Smart Materials Oriented Chemical Engineering,School of Chemical Engineering,Dalian University of Technology,Dalian 116024,China

Shanghai Synchrotron Radiation Facility,Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201204,China

zinc-oxo cluster C-F crosslinking extreme ultra-violet lithography radiation chemistry lithography mechanism

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaLiaoning Binhai LaboratoryFundamental Research Funds for the Central Universities

2192580222338005LBLB-2023-03DUT22LAB601

2024

中国科学:材料科学(英文)

中国科学:材料科学(英文)

CSTPCD
ISSN:
年,卷(期):2024.67(5)