中国科学:材料科学(英文)2024,Vol.67Issue(5) :1646-1653.DOI:10.1007/s40843-023-2801-2

无真空、低成本Mist-CVD外延制备高质量单晶NiO/Ga2O3 p-n异质结与器件

High-quality crystalline NiO/β-Ga2O3 p-n heterojunctions grown by the low-cost and vacuum-free mist-CVD for device applications

张泽雨林 宋庆文 刘丁赫 闫奕如 陈昊 穆昌根 陈大正 冯倩 张进成 张玉明 郝跃 张春福
中国科学:材料科学(英文)2024,Vol.67Issue(5) :1646-1653.DOI:10.1007/s40843-023-2801-2

无真空、低成本Mist-CVD外延制备高质量单晶NiO/Ga2O3 p-n异质结与器件

High-quality crystalline NiO/β-Ga2O3 p-n heterojunctions grown by the low-cost and vacuum-free mist-CVD for device applications

张泽雨林 1宋庆文 1刘丁赫 1闫奕如 1陈昊 1穆昌根 1陈大正 1冯倩 1张进成 1张玉明 1郝跃 1张春福1
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作者信息

  • 1. National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology,School of Microelectronics,Xidian University,Xi'an 710071,China
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摘要

在氧化镓(Ga2O3)材料p型掺杂困难的背景下,Ga2O3 p-n异质结器件在氧化镓器件的应用中起着重要作用.因此,寻找一种高效、经济的制备方法制备Ga2O3异质结对器件应用具有重要意义.在这项工作中,我们成功基于低成本、无真空的雾化学气相沉积(Mist-CVD)外延制备了单晶氧化镍(NiO)和β-Ga2O3异质结.其中,NiO(111)和β-Ga2O3(-201)的XRD摇摆曲线半高宽分别为0.077°和0.807°.NiO与β-Ga2O3之间的能带表现为Ⅱ型异质结构.基于此异质结,我们制备了准垂直器件,器件具有明显的p-n结整流特性,反向击穿电压为117V.本工作为β-Ga2O3异质p-n结的制备提供了一种低成本、高质量的方法.

Abstract

Gallium oxide(Ga2O3)p-n heterojunctions play an important role in addressing the difficulties in Ga2O3 p-type doping.Therefore,an efficient and economical fabri-cation method needs to be established to create single-crystal Ga2O3 heterojunctions for device applications.In this work,we successfully achieved epitaxial growth of single-crystal nickel oxide(NiO)and β-Ga2O3 heterojunctions based on the low-cost and vacuum-free mist chemical-vapor deposition.The full width at half maximum of the X-ray diffraction rocking curves of NiO(111)and β-Ga2O3(-201)reached 0.077° and 0.807°,respectively.The energy band between NiO and β-Ga2O3 has a Type Ⅱ heterojunction.Finally,we pre-pared a quasi-vertical diode based on the NiO/β-Ga2O3 het-erojunction,which exhibits obvious rectification characteristics of the p-n junction and provides a reverse breakdown voltage of 117 V.This work proposes a low-cost fabrication method for β-Ga2O3 p-n heterojunctions.

关键词

β-Ga2O3/heterojunction structure/p-n junctions/NiO/mist-CVD

Key words

β-Ga2O3/heterojunction structure/p-n junctions/NiO/mist-CVD

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基金项目

National Key R&D Program of China(2022YFB3605402)

National Key R&D Program of China(2021YFB3601800)

Fundamental Research Funds for the Central Universities()

National Natural Science Foundation of China(62274132)

National Natural Science Foundation of China(62004151)

National Natural Science Foundation of China(62274126)

National Natural Science Foundation of China(62174123)

Natural Science Basic Research Program of Shaanxi(2021JC-24)

Innovation Capability Support Program of Shaanxi(2021TD-04)

Wuhu and Xidian University Special Fund for Industryuniversityresearch Cooperation(XWYCXY-012021001)

Wuhu and Xidian University Special Fund for Industryuniversityresearch Cooperation(XWYCXY-012021006)

出版年

2024
中国科学:材料科学(英文)

中国科学:材料科学(英文)

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