磁有序CoH2SeO4薄片中的室温铁电性
Room-temperature ferroelectricity in magnetically ordered CoH2SeO4 flakes
陈璐秋 1余冰 2沈阳 3刘逸飞 1王号南 1冯光迪 1朱秋香 1罗卫东 4刘俊明 5万建国 5赵庆彪 6田博博 1褚君浩 7段纯刚8
作者信息
- 1. Key Laboratory of Polar Materials and Devices(MOE),Shanghai Center of Brain-inspired Intelligent Materials and Devices,and Department of Electronics,East China Normal University,Shanghai 200241,China;Zhejiang Lab,Hangzhou 310000,China
- 2. Key Laboratory of Polar Materials and Devices(MOE),Shanghai Center of Brain-inspired Intelligent Materials and Devices,and Department of Electronics,East China Normal University,Shanghai 200241,China;Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China
- 3. Key Laboratory of Polar Materials and Devices(MOE),Shanghai Center of Brain-inspired Intelligent Materials and Devices,and Department of Electronics,East China Normal University,Shanghai 200241,China;Key Laboratory of Artificial Structures and Quantum Control,School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China
- 4. Key Laboratory of Artificial Structures and Quantum Control,School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China
- 5. Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China
- 6. Key Laboratory of Polar Materials and Devices(MOE),Shanghai Center of Brain-inspired Intelligent Materials and Devices,and Department of Electronics,East China Normal University,Shanghai 200241,China;School of Chemistry and Environmental Engineering,Wuhan Institute of Technology,Wuhan 430205,China
- 7. Key Laboratory of Polar Materials and Devices(MOE),Shanghai Center of Brain-inspired Intelligent Materials and Devices,and Department of Electronics,East China Normal University,Shanghai 200241,China;State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Institute of Optoelectronics,Fudan University,Shanghai 200433,China
- 8. Key Laboratory of Polar Materials and Devices(MOE),Shanghai Center of Brain-inspired Intelligent Materials and Devices,and Department of Electronics,East China Normal University,Shanghai 200241,China;Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China
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摘要
本文通过第一性原理计算和实验表征证明了二维CoH2SeO4薄膜的磁有序和滑移铁电性.首先,实验结果证实了粉末CoH2SeO4样品的反铁磁序.同时,第一性原理计算表明单层CoH2SeO4具有反铁磁(AFM-I)基态(TN≈75 K),且预测了二维CoH2SeO4薄膜具有以不对称的三重势阱态为特征的滑移铁电性,并在实验中测得了 180°压电滞回线、可反转铁电畴和二次谐波信号.此外,在基于二维CoH2SeO4薄膜的电容器中获得铁电材料所特有的电滞回线和蝴蝶状的电容曲线.介电温谱测试表明二维CoH2SeO4薄膜的铁电转变温度约为370 K.CoH2SeO4中滑移铁电性和反铁磁性的出现为获得低维多铁材料指出了一条新的途径.
Abstract
Here,we demonstrate the existence of magnetic ordering and sliding ferroelectricity in two-dimensional CoH2SeO4 multilayers.The experimental result reveals the antiferromagnetic order in powder sample,and first-princi-ples calculation indicates the antiferromagnetic ground state with TN≈75 K in CoH2SeO4 single layer.The sliding ferroe-lectricity with an asymmetric triplet potential well is theore-tically predicted and experimentally confirmed by 180°-piezoelectric hysteresis loops,switchable domains and second harmonic generation signals in CoH2SeO4 multilayers.The vertically stacked ferroelectric capacitor shows both polariza-tion and capacitance hysteresis loops.A ferroelectric transi-tion temperature of-370 K is obtained from the temperature-dependent dielectricity.The emergence of sliding ferroelec-tricity and anti-ferromagnetism points out a new route for obtaining low-dimensional multiferroic materials.
关键词
two-dimensional materials/sliding ferroelectricity/multiferroic materialsKey words
two-dimensional materials/sliding ferroelectricity/multiferroic materials引用本文复制引用
基金项目
National Key Research and Development Program of China(2021YFA1200700)
National Natural Science Foundation of China(52372120)
National Natural Science Foundation of China(T2222025)
National Natural Science Foundation of China(62174053)
Shanghai Science and Technology Innovation Action Plan(21JC1402000)
Shanghai Science and Technology Innovation Action Plan(21520714100)
Fundamental Research Funds for the Central Universities()
出版年
2024
NETL
NSTL
万方数据