基于隧穿宽度调制的具有超高开态电流的二维Tl2O隧穿场效应晶体管
Ultra-high on-current in two-dimensional Tl2O TFETs with tunneling width modulation
陈楚尧 1杨佳霖 1周文瀚 1胡学敏 2郭婷婷 1张胜利1
作者信息
- 1. Key Laboratory of Advanced Display Materials and Devices,Ministry of Industry and Information Technology,College of Material Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China
- 2. School of Material Engineering,Jinling Institute of Technology,Nanjing 211169,China
- 折叠
摘要
隧穿场效应晶体管作为后CMOS时代的低功耗器件引起了人们的极大关注.基于带间隧穿机制,隧穿场效应晶体管具有抑制亚阈值摆幅低于60 mV dec-1的潜力.然而,与金属氧化物半导体场效应晶体管相比,传统隧穿场效应晶体管的开态电流相对较低,阻碍了其实际应用.在此,我们提出二维Tl2O材料具有直接且合适大小的带隙,小的电子和空穴有效质量,独特的三重简并和强各向异性电子结构,这适合作为口袋掺杂隧穿场效应晶体管的沟道材料.得益于口袋导致的降低的隧穿宽度,栅极长度为10 nm的二维Tl2O隧穿场效应晶体管具有3449μAμm-1的超高开态电流,具有亚热的亚阈值摆幅,其值为49 mV dec-1.值得注意的是,与未实施口袋掺杂的情况相比,开态电流的值提高到441％,并且成功满足了国际设备和系统路线图对于2028年高性能器件的要求.这项工作展示了二维Tl2O口袋隧穿场效应晶体管在下一代低功耗高性能纳米电子学中的巨大潜力.
Abstract
Tunneling field-effect transistors(TFETs)have attracted tremendous attention as post-complementary metal oxide semiconductor low-power-dissipation devices.Based on the band-to-band tunneling mechanism,TFETs hold the po-tential for suppressing the subthreshold swing(SS)below 60 mV dec-1.However,the relatively low on-state current compared with metal-oxide-semiconductor FETs hinders the practical application of the traditional TFETs.Herein,we propose that two-dimensional(2D)Tl2O possesses a direct and moderate bandgap,small effective mass for electrons and holes,unique threefold degenerate,and strong anisotropic electronic structures,which is suitable for the channel mate-rial of the pocket-doped TFETs.Benefiting from the reduced tunneling width led by the pocket,the 2D Tl2O TFET with a 10-nm gate length possesses an ultra-high on-state current of 3449 μA μm-1 with a sub-thermal SS of 49 mV dec-1.Notably,the on-state current increases to 441％compared with no pocket doping and successfully meets the International Roadmap for Devices and Systems(IRDS)high-performance requests for the year 2028.This work demonstrates the great potential of 2D Tl2O pocket TFETs for next-generation low-power-dissipation and high-performance nanoelectronics.
关键词
first-principles calculations/2D materials/electronic structure properties/transport properties/density functional theoryKey words
first-principles calculations/2D materials/electronic structure properties/transport properties/density functional theory引用本文复制引用
基金项目
National Natural Science Foundation of China(91964103)
National Natural Science Foundation of China(62304109)
出版年
2024
NETL
NSTL
万方数据