MoTe2/Ta2NiSe5/MoTe2范德华双异质结实现超快、宽带和偏振敏感光电探测器
Ultrafast,broadband and polarization-sensitive photodetector enabled by MoTe2/Ta2NiSe5/MoTe2 van der Waals dual heterojunction
张洁莲 1黎思娜 1朱玲玉 1郑涛 1李翎 1邓群睿 1潘志东 1江美华 1杨亚妮 1林月蓉 1李京波 2霍能杰3
作者信息
- 1. School of Semiconductor Science and Technology,South China Normal University,Foshan 528225,China
- 2. College of Physics and Optoelectronic Engineering,Zhejiang University,Hangzhou 310000,China
- 3. School of Semiconductor Science and Technology,South China Normal University,Foshan 528225,China;Guangdong Provincial Key Laboratory of Chip and Integration Technology,Guangzhou 510631,China
- 折叠
摘要
高效光电探测器在监控、热成像、光通信和环境监测等领域具有广泛、迫切的应用需求.优化光电探测器参数如微型化、高量子效率、超快响应速度等,仍然是一项艰巨的任务.我们提出了一种由顶部/底部MoTe2和中间Ta2NiSe5层组成的双范德华异质结.利用双异质结界面增强光收集效率和产生两个对立的内置电场,使得器件具有400到1550 nm的宽光谱响应,并表现出优异的性能,包括82.9％的外量子效率和3.5/4.2μs的快速响应速度.此外,利用二维Ta2NiSe5纳米片的面内各向异性,我们实现了在635和1550 nm波长下的极化灵敏度,分别为16.3和8.1.这项研究为开发高性能和多功能光电探测器提供了平台,为先进光电器件的设计和应用提供了新的方向.
Abstract
The emergence of cutting-edge technology has spurred an urgent demand for highly efficient photodetectors,due to their crucial applications in surveillance,thermal imaging,optical communication and environmental mon-itoring.Yet,the simultaneous optimization of photodetector parameters including miniaturization,high quantum effi-ciency,and heterogenous functionality remains a challenging task.In this study,we address these limitations by leveraging the anisotropic properties of Ta2NiSe5 materials for polariza-tion-sensitive photodetection and selecting suitable two-di-mensional(2D)materials to enhance the performance.We present a dual van der Waals heterojunction comprising top/bottom MoTe2 and middle Ta2NiSe5 layers.Thanks to the augmented light collection efficiency and two opposing built-in electric fields at the dual heterojunction interfaces,our device demonstrates not only a broad spectral response ran-ging from 400 to 1550 nm,but also impressive performance parameters including an external quantum efficiency of 82.9％,and a rapid response speed of 3.5/4.2 μs,which has a substantial improvement over the single junction device.Leveraging the robust in-plane anisotropy of 2D Ta2NiSe5 nanosheets,the double heterojunction device displays com-petitive polarization sensitivity with polarization ratio values of 16.3 and 8.1 under 635 and 1550 nm,respectively.This work provides a promising platform for the development of high-performce and multifunctional photodetectors,thereby pioneering new directions for advanced optoelectronic device design and applications.
关键词
polarimetric photodetector/Ta2NiSe5/MoTe2 het-erojunction/photovoltaic/polarization sensitivityKey words
polarimetric photodetector/Ta2NiSe5/MoTe2 het-erojunction/photovoltaic/polarization sensitivity引用本文复制引用
基金项目
National Natural Science Foundation of China(11904108)
the"Pearl River Talent Recruitment Program"(2019ZT08X639)
Guangdong Basic and Applied Basic Research Foundation(2024A1515030107)
出版年
2024
NETL
NSTL
万方数据