Ⅰ-Ⅲ-Ⅵ量子点光物理和电子性能及其发光二极管应用
Regulation of photophysical and electronic properties of Ⅰ-Ⅲ-Ⅵ quantum dots for light-emitting diodes
董晓菲 1李祥高 2印寿根 3李政 4李龙武 1李景灵5
作者信息
- 1. School of Science,Langfang Normal University,Langfang 065000,China
- 2. School of Chemical Engineering and Technology,Tianjin University,Tianjin 300350,China
- 3. Institute of Material Physics,Key Laboratory for Optoelectronic Materials and Devices of Tianjin,Key Laboratory of Display Materials and Photoelectric Devices of Ministry of Education,Tianjin University of Technology,Tianjin 300384,China
- 4. College of Chemistry and Materials Science,Langfang Normal University,Langfang 065000,China
- 5. School of Materials Science and Hydrogen Energy,Foshan University,Foshan 528000,China
- 折叠
摘要
量子点发光二极管(QLEDs)具有高能效、宽色域和低成本等优势,已成为新一代显示技术的重要研究方向.随着量子点发光效率的提高和器件结构的优化,QLEDs在发光效率和工作寿命方面取得了突破性进展.然而,目前主流的量子点材料含有铅、镉等重金属元素,这制约了量子点显示器件的发展和应用.因此,研发环境友好型量子点材料成为QLEDs技术发展的关键.Ⅰ-Ⅲ-Ⅵ量子点由于优异的光物理性质,如组分依赖可调带隙、大的Stokes位移和高效发光,使其成为构筑高显色指数QLEDs的发光材料.目前,异质结的微观结构,特别是表面态和界面态是影响多层薄膜的电致发光器件中载流子复合和传输的关键,进而影响器件的发光效率及稳定性.本文综述了Ⅰ-Ⅲ-Ⅵ多元量子点的合成策略,深入分析了其发光机制及对光物理和电子性质的调控,探究了Ⅰ-Ⅲ-Ⅵ量子点在多色和白光电致发光器件中的应用.最后,探讨了新型量子点材料及其QLEDs面临的挑战和未来前景.
Abstract
Quantum dot light-emitting diodes(QLEDs)have become an important research direction in the pursuit of next-generation display technology owing to their favorable attributes,including high energy efficiency,wide color gamut,and low cost.Breakthroughs in the luminous efficiency and operating life of QLEDs have been achieved by enhancing the photoluminescence efficiency of the quantum dots(QDs)and optimizing the device structure.However,the current main-stream QDs contain heavy metal elements such as lead and cadmium,which restrict the development and application of QD displays.Exploring new types of environmentally friendly QDs is crucial.Ⅰ-Ⅲ-Ⅵ semiconductor QDs have been de-veloped as luminescent materials for constructing high color rendering index QLEDs,owing to the outstanding photo-physical properties of these QDs,such as composition-de-pendent tunable bandgap,large Stokes shift,and high-efficiency luminescence.Currently,the microstructures of heterojunctions,especially the surface states and interface states,affect the recombination and transport of carriers in electroluminescent(EL)devices with multilayer thin film structures,which in turn influence the luminous efficiency and stability of the device.This review focuses on the synthesis strategies of Ⅰ-Ⅲ-Ⅵ multi-component QDs and provides an in-depth understanding of the luminescence mechanism and the regulation of photophysical and electronic properties.Furthermore,the application of Ⅰ-Ⅲ-Ⅵ QDs in multi-color and white EL QLEDs is discussed and the challenges and outlook are addressed.
关键词
Ⅰ-Ⅲ-Ⅵ quantum dots/synthesis method/defect states/luminescence mechanism/light-emitting diodesKey words
Ⅰ-Ⅲ-Ⅵ quantum dots/synthesis method/defect states/luminescence mechanism/light-emitting diodes引用本文复制引用
基金项目
Science and Technology Project of Hebei Education Department(QN2021122)
Natural Science Foundation of Hebei Province(F2022408002)
Science Research Startup Funding of Langfang Normal University(XBQ202305)
National Natural Science Foundation of China(51902054)
出版年
2024
NETL
NSTL
万方数据