Three-dimensional/one-dimensional perovskite heterostructures for stable tri-state synaptic memristors
Memristors have great potential in neural net-work computation.Perovskite memristors exhibit excellent resistive-switching(RS)properties between high resistance state(HRS)and low resistance state(LRS)state under applied voltage due to the extraordinary ion migration and superior charge transfer.However,the stability issue of traditional three-dimensional(3D)perovskites is still challenging.Here,one-dimensional(1D)(CH3)3SPbI3 perovskite passivation layer was in-situ formed on 3D perovskite film,which was further applied in stable synaptic memristor.The memristor was provided with three resistance states due to the hetero-junction electric field coupled with ion migration.The on/off ratio of memristors was obviously improved from 10 to over 60.The RS characteristics of 3D/1D perovskite memristor remained unchanged after 10 3 s read and 300 switching cycles.The 3D/1D perovskite memristor effectively exhibited versa-tile synaptic plasticity behaviors including long-term po-tentiation,long-term depression and paired-pulse facilitation by controlling the input voltages.Notably,the novel device provides a new candidate for next-generation neuromorphic computing.
memristorperovskite heterojunctionone-dimen-sion(CH3)3SPbI3synaptic function
龚佳琦、季石磊、李锦添、魏蝴蝶、毛巍威、胡静、黄稳、何学敏、李兴鳌、楚亮
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School of Science & School of Electronic and Optical Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
Institute of Carbon Neutrality and New Energy & School of Electronics and Information,Hangzhou Dianzi University,Hangzhou 310018,China
memristor perovskite heterojunction one-dimen-sion (CH3)3SPbI3 synaptic function
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