中国科学:材料科学(英文)2024,Vol.67Issue(9) :2866-2872.DOI:10.1007/s40843-024-2950-5

晶硅太阳电池中高性能SiOx/MgOx电子选择性接触

High-performance SiOx/MgOx electron-selective contacts for crystalline silicon solar cells

李坤 高锟 王心雨 娄心亮 许大成 邢春芳 李文浩 李海澄 杨新波
中国科学:材料科学(英文)2024,Vol.67Issue(9) :2866-2872.DOI:10.1007/s40843-024-2950-5

晶硅太阳电池中高性能SiOx/MgOx电子选择性接触

High-performance SiOx/MgOx electron-selective contacts for crystalline silicon solar cells

李坤 1高锟 1王心雨 1娄心亮 2许大成 1邢春芳 3李文浩 1李海澄 1杨新波1
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作者信息

  • 1. College of Energy,Soochow Institute for Energy and Materials InnovationS(SIEMIS),Soochow University,Suzhou 215006,China
  • 2. College of Energy,Soochow Institute for Energy and Materials InnovationS(SIEMIS),Soochow University,Suzhou 215006,China;School of Materials Science and Engineering,Jiangsu University,Zhenjiang 212013,China
  • 3. College of Energy,Soochow Institute for Energy and Materials InnovationS(SIEMIS),Soochow University,Suzhou 215006,China;Institute of Functional Nano & Soft Materials,Soochow University,Suzhou 215123,China
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摘要

金属和硅接触区域的高载流子复合损失是限制晶硅太阳电池的光电转换效率的主要因素之一.基于金属化合物的载流子选择性接触正在被集中开发以解决这个问题.在本工作中,我们提出了一种用于晶硅太阳电池的高性能电子选择性钝化接触SiOx/MgOx.SiOx/MgOx由热生长的SiOx(~0.7nm)和热蒸发的MgOx(~1.0nm)制备.通过测量表面钝化性能和接触电阻率(ρc)研究了SiOx/MgOx电子选择性钝化接触.结果表明,优化的SiOx/MgOx接触在n型晶硅表面上显示出非常低的ρc(3.4 mΩ cm2)和好的表面钝化.在具有全面积SiOx/MgOx背接触的n型c-Si太阳能电池上实现了 21.1%的高光电转换效率.

Abstract

High carrier recombination loss at the metal and silicon contact regions is one of the dominant factors con-straining the power conversion efficiency(PCE)of crystalline silicon(c-Si)solar cells.Metal compound-based carrier-se-lective contacts are being intensively developed to address this issue.In this work,we present a high-performance electron-selective SiOx/MgOx contact for c-Si solar cells.The SiOx/MgOx stack is prepared by thermally-grown SiOx(~0.7 nm)and thermally-evaporated MgOx(~1.0 nm).The electron se-lectivity of SiOx/MgOx contact is investigated by measuring the surface passivation and the contact resistivity(ρc)on the c-Si surface.The results demonstrate that optimized SiOx/MgOx contact displays a very low ρc(3.4 mΩ cm2)and a good surface passivation on an n-type c-Si surface simultaneously.A high PCE of 21.1%is achieved on an n-type c-Si solar cell featuring a full-area SiOx/MgOx rear contact.

关键词

crystalline silicon solar cell/electron-selective contact/magnesium oxide

Key words

crystalline silicon solar cell/electron-selective contact/magnesium oxide

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基金项目

National Natural Science Foundation of China(62174114)

National Key R&D Program of China(2022YFB4200203)

Department of Science and Technology of Jiangsu Province(BE2022036)

Department of Science and Technology of Jiangsu Province(BE2022027)

Department of Science and Technology of Jiangsu Province(BE2022023)

Distinguished Professor Award of Jiangsu Province()

the"Dual Carbon"Science and Technology Project of Suzhou(ST202219)

出版年

2024
中国科学:材料科学(英文)

中国科学:材料科学(英文)

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