中国科学:材料科学(英文)2024,Vol.67Issue(9) :2873-2879.DOI:10.1007/s40843-024-2997-7

光子诱导硅异质结太阳电池性能变化的机理

Mechanism of photon-induced performance changes in silicon heterojunction solar cells

邓琦 叶浩然 黄圣磊 孙泽华 杨艳云 李雷 马柱 苏荣 龙巍 蒋方丹 郭恒 邢国强 刘文柱 俞健
中国科学:材料科学(英文)2024,Vol.67Issue(9) :2873-2879.DOI:10.1007/s40843-024-2997-7

光子诱导硅异质结太阳电池性能变化的机理

Mechanism of photon-induced performance changes in silicon heterojunction solar cells

邓琦 1叶浩然 1黄圣磊 2孙泽华 3杨艳云 4李雷 4马柱 1苏荣 5龙巍 5蒋方丹 5郭恒 6邢国强 5刘文柱 7俞健6
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作者信息

  • 1. School of New Energy and Materials,Southwest Petroleum University,Chengdu 610500,China
  • 2. Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences(CAS),Shanghai 201800,China;School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China
  • 3. School of New Energy and Materials,Southwest Petroleum University,Chengdu 610500,China;Tongwei Solar(Chengdu)Ltd.,Chengdu 600200,China
  • 4. School of Physics and Electronical Science,Chuxiong Normal University,Chuxiong 675000,China
  • 5. Tongwei Solar(Chengdu)Ltd.,Chengdu 600200,China
  • 6. School of New Energy and Materials,Southwest Petroleum University,Chengdu 610500,China;Tianfu Yongxing Laboratory,Chengdu 610213,China
  • 7. Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences(CAS),Shanghai 201800,China
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摘要

短波长紫外(UV)光子会对氢化非晶硅薄膜以及硅异质结(SHJ)太阳电池和组件的性能造成不利影响.本研究探讨了光子诱导性能变化的影响和潜在机制.紫外光会破坏Si-H键,导致本征和掺杂氢化非晶硅(a-Si∶H)薄膜中的氢含量显著降低,这一过程破坏了界面钝化,导致SHJ太阳电池和组件的退化,主要表现为开路电压(Voc)和填充因子(FF)的降低.SHJ太阳电池正面紫外光辐照后,Voc和FF分别降低1.38%和2.28%,效率下降2.28%.对于从背面照射的电池,Voc和FF分别降低约1.96%和2.73%,导致总效率降低约3.58%.然而,对于正面照射的电池,随后的光浸润使Voc和FF分别增加了约0.96%和1.37%,从而使总效率提高了约2.51%.综上所述,光浸润是恢复紫外辐照对SHJ太阳电池性能损失的有效措施.本研究阐明了a-Si∶H薄膜、SHJ太阳电池和组件在紫外辐照和光浸润下性能变化的影响机制,为开发高效可靠的SHJ器件提供了重要贡献.

Abstract

Short-wavelength ultraviolet(UV)photons ad-versely affect hydrogenated amorphous silicon thin films,as well as on silicon heterojunction(SH J)solar cells and modules.This research examines the impact and mechanisms of pho-ton-induced performance changes.UV A exposure disrupts Si-H bonds,significantly reducing hydrogen content in both intrinsic and doped hydrogenated amorphous silicon(a-Si∶H)films.This disruption impairs the interface passivation effect,leading to the degradation of SHJ solar cells and modules,primarily indicated by a decrease in open-circuit voltage(Voc)and fill factor(FF).UV irradiation from the front side of SHJ solar cells reduces Voc and FF by 1.38%and 2.28%,respectively,resulting in a 2.28%efficiency decline.Cells irradiated from the backside show decreases in Voc and FF of approximately 1.96%and 2.73%,respectively,leading to an overall efficiency reduction of approximately 3.58%.However,subsequent light-soaking increases Voc and FF by approximately 0.96%and 1.37%,respectively,for frontside-irradiated cells,achieving an overall efficiency improvement of approximately 2.51%.Thus,light-soaking effectively recovers performance losses caused by UV irradiation in SHJ solar cells.This research clarifies the mechanisms influencing the performance of a-Si:H thin films,SHJ solar cells,and modules under UV irradiation and light-soaking,offering significant contributions towards the devel-opment of highly efficient and reliable SHJ devices.

关键词

silicon solar cells/heterojunction/UV irradiation/light soaking/hydrogen content

Key words

silicon solar cells/heterojunction/UV irradiation/light soaking/hydrogen content

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基金项目

Sichuan Science and Technology Program(2023YFG0098)

Sichuan Science and Technology Program(2023ZYD0163)

National Natural Science Foundation of China(T2322028)

Science and Technology Commission of Shanghai Municipality(22ZR1473200)

Chengdu Science and Technology Program(2024-JB00-00010-GX)

Sichuan Province Key Laboratory of Display Science and Technology()

出版年

2024
中国科学:材料科学(英文)

中国科学:材料科学(英文)

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