首页|光子诱导硅异质结太阳电池性能变化的机理

光子诱导硅异质结太阳电池性能变化的机理

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短波长紫外(UV)光子会对氢化非晶硅薄膜以及硅异质结(SHJ)太阳电池和组件的性能造成不利影响.本研究探讨了光子诱导性能变化的影响和潜在机制.紫外光会破坏Si-H键,导致本征和掺杂氢化非晶硅(a-Si∶H)薄膜中的氢含量显著降低,这一过程破坏了界面钝化,导致SHJ太阳电池和组件的退化,主要表现为开路电压(Voc)和填充因子(FF)的降低.SHJ太阳电池正面紫外光辐照后,Voc和FF分别降低1.38％和2.28％,效率下降2.28％.对于从背面照射的电池,Voc和FF分别降低约1.96％和2.73％,导致总效率降低约3.58％.然而,对于正面照射的电池,随后的光浸润使Voc和FF分别增加了约0.96％和1.37％,从而使总效率提高了约2.51％.综上所述,光浸润是恢复紫外辐照对SHJ太阳电池性能损失的有效措施.本研究阐明了a-Si∶H薄膜、SHJ太阳电池和组件在紫外辐照和光浸润下性能变化的影响机制,为开发高效可靠的SHJ器件提供了重要贡献.
Mechanism of photon-induced performance changes in silicon heterojunction solar cells
Short-wavelength ultraviolet(UV)photons ad-versely affect hydrogenated amorphous silicon thin films,as well as on silicon heterojunction(SH J)solar cells and modules.This research examines the impact and mechanisms of pho-ton-induced performance changes.UV A exposure disrupts Si-H bonds,significantly reducing hydrogen content in both intrinsic and doped hydrogenated amorphous silicon(a-Si∶H)films.This disruption impairs the interface passivation effect,leading to the degradation of SHJ solar cells and modules,primarily indicated by a decrease in open-circuit voltage(Voc)and fill factor(FF).UV irradiation from the front side of SHJ solar cells reduces Voc and FF by 1.38％and 2.28％,respectively,resulting in a 2.28％efficiency decline.Cells irradiated from the backside show decreases in Voc and FF of approximately 1.96％and 2.73％,respectively,leading to an overall efficiency reduction of approximately 3.58％.However,subsequent light-soaking increases Voc and FF by approximately 0.96％and 1.37％,respectively,for frontside-irradiated cells,achieving an overall efficiency improvement of approximately 2.51％.Thus,light-soaking effectively recovers performance losses caused by UV irradiation in SHJ solar cells.This research clarifies the mechanisms influencing the performance of a-Si:H thin films,SHJ solar cells,and modules under UV irradiation and light-soaking,offering significant contributions towards the devel-opment of highly efficient and reliable SHJ devices.

silicon solar cellsheterojunctionUV irradiationlight soakinghydrogen content

邓琦、叶浩然、黄圣磊、孙泽华、杨艳云、李雷、马柱、苏荣、龙巍、蒋方丹、郭恒、邢国强、刘文柱、俞健

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School of New Energy and Materials,Southwest Petroleum University,Chengdu 610500,China

Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences(CAS),Shanghai 201800,China

School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China

Tongwei Solar(Chengdu)Ltd.,Chengdu 600200,China

School of Physics and Electronical Science,Chuxiong Normal University,Chuxiong 675000,China

Tianfu Yongxing Laboratory,Chengdu 610213,China

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silicon solar cells heterojunction UV irradiation light soaking hydrogen content

Sichuan Science and Technology ProgramSichuan Science and Technology ProgramNational Natural Science Foundation of ChinaScience and Technology Commission of Shanghai MunicipalityChengdu Science and Technology ProgramSichuan Province Key Laboratory of Display Science and Technology

2023YFG00982023ZYD0163T232202822ZR14732002024-JB00-00010-GX

2024

10.1007/s40843-024-2997-7

中国科学:材料科学(英文)

中国科学:材料科学(英文)

CSTPCD
ISSN：
年,卷(期)：2024.67(9)