两步快速热处理退火策略实现8.2％效率的水热法硫化锑薄膜太阳能电池
8.2％-Efficiency hydrothermal Sb2S3 thin film solar cells by two-step RTP annealing strategy
邓辉 1冯信信 2朱奇强 2刘永豪 2王桂东 2张彩霞 2郑巧 2吴炯桦 1王伟煌 2程树英3
作者信息
- 1. College of Physics and Information Engineering,Institute of Micro-Nano Devices and Solar Cells,Fuzhou University,Fuzhou 350108,China;Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350108,China
- 2. College of Physics and Information Engineering,Institute of Micro-Nano Devices and Solar Cells,Fuzhou University,Fuzhou 350108,China
- 3. College of Physics and Information Engineering,Institute of Micro-Nano Devices and Solar Cells,Fuzhou University,Fuzhou 350108,China;Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350108,China;Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering,Changzhou 213164,China
- 折叠
摘要
水热法制备的硫化锑(Sb2S3)太阳能电池引起了广泛关注.退火结晶是水热制备Sb2S3薄膜的关键工艺.然而,薄膜不完全结晶和高温S损失会导致缺陷复合,从而限制器件性能.本文提出了一种两步快速热处理退火策略,以提高Sb2S3太阳能电池的结晶质量和转换效率.氩气保护下的常压退火过程可以抑制饱和蒸汽压引起的S损失,以330℃低温和370℃高温过程实现两步退火,保证了Sb2S3薄膜的高结晶度和垂直取向,薄膜的缺陷浓度从1.01 × 1012降低到5.97 × 1011 cm-3.Sb2S3太阳能电池的光电转换效率达到8.20％,其中开路电压为784 mV.1.17V的内建电压(Vbi)和1.48的光强依赖因子表明,器件的异质结质量得到了提高,缺陷复合被抑制.本文所提出的两步退火策略和物理机制为研究Sb2S3薄膜太阳能电池提供了新思路.
Abstract
Antimony sulfide(Sb2S3)solar cells fabricated via hydrothermal deposition have attracted widespread at-tention.The annealing crystallization process plays a crucial role in achieving optimal crystallinity in hydrothermal Sb2S3 thin films.Nevertheless,incomplete crystallization and the loss of sulfur at high-temperature contribute to defect re-combination,constraining device performance.Herein,a two-step rapid thermal processing(RTP)annealing strategy is proposed to improve the crystal quality and efficiency of Sb2S3 solar cells.The annealing process in Ar protection with at-mospheric pressure can suppress S loss caused by saturated vapor pressure.The two-step RTP annealing with the 330℃ low-temperature and 370℃ high-temperature process ensures high crystallinity and vertical orientations of Sb2S3 thin films,accompanied by a reduction in defect concentration from 1.01 × 1012 to 5.97 × 1011 cm-3.The Sb2S3 solar cell achieves an efficiency of 8.20％with an enhanced open circuit voltage(Voc)of 784 mV.The build-in voltage(Vbi)of 1.17 V and irradiation-dependent ideal factor(n)of 1.48 demonstrate enhanced heterojunction quality and suppressed defect re-combination in the devices.The presented two-step annealing strategy and physical mechanism study will open new pro-spects for high-performance Sb2S3 solar cells.
关键词
Sb2S3 solar cells/hydrothermal/two-step annealing/defect passivationKey words
Sb2S3 solar cells/hydrothermal/two-step annealing/defect passivation引用本文复制引用
出版年
2024
NETL
NSTL
万方数据