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自支撑氧化物薄膜的制备及其相关物性和器件应用

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对氧化物异质外延的研究一直受到失配应变和衬底夹持的阻碍,这严重影响了对氧化物体系的性能优化和对其基本性质的理解.近年来发展的自支撑薄膜制备技术为解决上述问题提供了新的方案,已有研究表明单晶氧化物薄膜能从衬底上无损剥离并转移到任意基材上.本文基于氧化物薄膜,总结了自支撑氧化物薄膜制备方法、相关物性研究以及器件方面应用.首先,我们汇总了自支撑氧化物薄膜制备及转移的主要策略;其次,也探讨了自支撑氧化物薄膜所表现出的新颖物性,特别是在不同应变状态下的物性调控研究;最后,我们介绍了三种基于自支撑氧化物薄膜的代表性器件.总的来说,本篇综述展现了自支撑氧化物薄膜在新型柔性器件等相关领域的巨大潜力.
Freestanding oxide membranes:synthesis,tunable physical properties,and functional devices
The study of oxide heteroepitaxy has been hindered by the issues of misfit strain and substrate clamping,which impede both the optimization of performance and the acquisition of a fundamental understanding of oxide systems.Re-cently,however,the development of freestanding oxide membranes has provided a plausible solution to these substrate limitations.Single-crystalline functional oxide films can be released from their substrates without incurring significant damage and can subsequently be transferred to any substrate of choice.This paper discusses recent advancements in the fabrication,adjustable physical properties,and various applications of freestanding oxide perovskite films.First,we present the primary strategies employed for the synthesis and transfer of these freestanding perovskite thin films.Second,we explore the main functionalities observed in freestanding perovskite oxide thin films,with special attention to the tunable functionalities and physical properties of these freestanding perovskite membranes under varying strain states.Next,we encapsulate three representative devices based on freestanding oxide films.Overall,this review highlights the po-tential of freestanding oxide films for the study of novel functionalities and flexible electronics.

freestanding oxide membranestransition metal oxidesthin filmselectronic devices

王傲、章金凤、王凌飞

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中国科学技术大学合肥微尺度物质科学国家研究中心,安徽合肥 230026

自支撑氧化物薄膜 过渡金属氧化物 薄膜 电子器件

Fundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central Universities

WK9990000102WK2030000035

2024

10.52396/JUSTC-2023-0103

中国科学技术大学学报
中国科学技术大学

中国科学技术大学学报

CSTPCD北大核心
影响因子：0.421
ISSN：0253-2778
年,卷(期)：2024.54(7)