Effect of Nb Doping on Electrical Properties of Ca0.94Ce0.06Bi4Ti4O15 Bismuth Layered High-temperature Piezoelectric Ceramics
Ca0.94Ce0.06Bi4Ti4-xNbxO15(CCBTN)high-temperature piezoelectric ceramics with bismuth layer structure were prepared by a solid-state reaction method.The effects of B-site Nb doping on the crystal structure,micro morphology,dielectric and piezoelectric properties of the ceramics were investigated.The results show that all of the prepared CCBTN ceramics have a single bismuth layered phase,and a small amount of Nb doping is beneficial to improve the piezoelectric coefficient and thermal stability of the ceramics.When the doping amount of Nb is x=0.06,the highest obtained piezoelectric constant(d33=19.2 pC·N-1)is 2.4 times more than that of the pure CBT ceramics(d33=8 pC·N-1),and it retains more than 90％of the piezoelectric constant at room temperature after annealing at 500℃,showing excellent thermal stability.Meanwhile,the CCBTN(x=0.06)ceramic has a high Curie temperature(Tc=769 ℃),low dielectric loss(tan δ=0.65％)and high resistivity(pdc=2.0×107 Ω·cm@500 ℃),making it an excellent candidate material for high-temperature piezoelectric sensors.
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