Nb掺杂对Ca0.94Ce0.06Bi4Ti4O15铋层状高温压电陶瓷电学性能影响研究
Effect of Nb Doping on Electrical Properties of Ca0.94Ce0.06Bi4Ti4O15 Bismuth Layered High-temperature Piezoelectric Ceramics
李恺 1伍子成 1沈宗洋 1骆雯琴 1宋福生1
作者信息
- 1. 景德镇陶瓷大学材料科学与工程学院,先进陶瓷材料研究所,中国轻工业功能陶瓷材料重点实验室,江西省能量存储与转换陶瓷材料工程实验室,景德镇 333403
- 折叠
摘要
采用固相反应法制备了 Ca0.94Ce0.06Bi4Ti4-xNbxO15(CCBTN)铋层状高温压电陶瓷,研究了 B位Nb掺杂对陶瓷晶体结构、微观形貌、介电、压电性能的影响规律.结果表明:制备的CCBTN陶瓷均具有单一的铋层状结构相,少量Nb掺杂有利于陶瓷压电常数及热稳定性能的提升.当Nb掺杂量x=0.06时,陶瓷具有最高的压电常数(d33=19.2 pC·N-1),是纯CBT陶瓷压电常数(d33=8 pC·N-1)的2.4倍,且退火至500℃时其压电常数仍保持室温值的90％以上,表现出较优异的热稳定性.同时,该陶瓷具有高的居里温度(Tc=769 ℃)、低的介电损耗(tanδ=0.65％)及高的电阻率(pdc=2.0× 10Ω·cm@500 ℃),是高温压电传感器制作的优异候选材料.
Abstract
Ca0.94Ce0.06Bi4Ti4-xNbxO15(CCBTN)high-temperature piezoelectric ceramics with bismuth layer structure were prepared by a solid-state reaction method.The effects of B-site Nb doping on the crystal structure,micro morphology,dielectric and piezoelectric properties of the ceramics were investigated.The results show that all of the prepared CCBTN ceramics have a single bismuth layered phase,and a small amount of Nb doping is beneficial to improve the piezoelectric coefficient and thermal stability of the ceramics.When the doping amount of Nb is x=0.06,the highest obtained piezoelectric constant(d33=19.2 pC·N-1)is 2.4 times more than that of the pure CBT ceramics(d33=8 pC·N-1),and it retains more than 90％of the piezoelectric constant at room temperature after annealing at 500℃,showing excellent thermal stability.Meanwhile,the CCBTN(x=0.06)ceramic has a high Curie temperature(Tc=769 ℃),low dielectric loss(tan δ=0.65％)and high resistivity(pdc=2.0×107 Ω·cm@500 ℃),making it an excellent candidate material for high-temperature piezoelectric sensors.
关键词
高温压电陶瓷/铋层状结构/CaBi4Ti4O15/Nb掺杂/压电传感器Key words
High-temperature piezoceramics/Bismuth layer structure/CaBi4Ti4O15/Nb doping/Piezoelectric sensor引用本文复制引用
基金项目
江西省重点研发计划"揭榜挂帅"项目(20223BBE51018)
出版年
2024
NETL
NSTL
万方数据