Study of Photoelectric Properties of V,Nb and Mn Doped α-Bi2O3
Bismuth oxide(Bi2O3)as a photocatalyst holds great development prospects in wastewater treatment.In this study,based on the first-principles calculations of density functional theory,the electronic structure and optical properties of Vanadium(V),Niobium(Nb)and Manganese(Mn)doped Bi2O3 were analyzed.According to the calculation results,the band gap width of the semiconductor significantly narrows after ion doping.Additionally,a new impurity level appears near the Fermi level,reducing the energy required for electron transitions and increasing the conductivity.The optical properties show a redshift in the absorption edge of the doped system,which enhances the absorption range of visible light,thus providing a theoretical basis for the application of Bi2O3 in the field of photocatalysis.
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