Estimation of Particle Spacing in SiC Quantum Dots and Its Impact on Optical Properties
SiC quantum dots with excellent optical properties were prepared through a simple and controllable chemical corrosion preparation process using a mixture solution of hydrofluoric acid,nitric acid,and analytically pure sulfuric acid as etchants.Scanning electron microscopy was used to analyze and detect the evolution of the micromorphology of SiC quantum dots during the corrosion process.A mathematical model for the particle spacing of SiC quantum dots was established through Auto-CAD computer-aided design,estimating the average particle spacing between quantum dots in aqueous solutions at different dilution levels.The results show that as the average spacing of SiC quantum dots increases monotonically,their photoluminescence intensity shows a pattern of initial increase followed by decrease.The peak relative intensity of photoluminescence occurs at a particle spacing of 26 nm.This change law originates from the comprehensive effects of the quenching effect,light absorption,and fluorescence competition effect.
SiC quantum dotsParticle spacingFluorescence intensityCharacteristic emission spectrumFluorescence quenching
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