Determination of the Energy Level Alignment of Semiconductor Thin Film Materials by XPS/UPS/IPES
In recent years,the advantages of semiconductor materials in photoelectric conversion,photothermal conversion and battery energy storage have manifested broad prospects and witnessed rapid development.As research progresses,the structure-activity relationships of interface formation mechanisms,electronic structures and charge transfer processes have emerged as hotspots in the design of new semiconductor devices and new material research,supporting the development of significant fields such as energy catalysis,interface functional construction and chip devices.Thus,accurately measuring the energy level structure of semiconductor thin film materials is of great significance.The X-ray photoelectron spectroscopy(XPS),ultraviolet photoelectron spectroscopy(UPS),and inverse photoelectron spectroscopy(IPES)commonly used for measuring the full energy level structure of semiconductor thin film materials were introduced.The research objects,theoretical basis and measurement principles,measurement methods and methods for identifying energy level structures of these three characterization methods were emphasized.Finally,data analysis and discussion were carried out through practical cases.The three characterization techniques are complementary and can offer more effective information from the energy perspective,which is of crucial significance for the fabrication of semiconductor thin film materials,impurity doping,as well as the optimization of functions and performances.
万方数据
维普
