首页|基于原位光辐照X射线光电子能谱(ISI-XPS)技术的光催化材料石墨相氮化碳(g-C3N4)研究

基于原位光辐照X射线光电子能谱(ISI-XPS)技术的光催化材料石墨相氮化碳(g-C3N4)研究

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原位光辐照X射线光电子能谱(ISI-XPS)技术用于非氧化物光催化材料g-C3N4分析时,由于光辐照对结合能位移影响很小而常被忽略其光照过程中的结构变化.采用自行搭建的原位光辐照XPS装置进行测试发现,相比于波长405 nm的辐照光源,波长375 nm的光源(辐照光源功率大于15 mW)辐照g-C3N4材料15 min,g-C3N4共轭结构中C和N的XPS信号相对强度均出现明显变化,这归因于光辐照诱导电子转移而导致其化学结构发生改变,为光催化机理研究提供了补充证据.同时经过实验验证,紫外光辐照后,g-C3N4材料表面由于能量注入引起温度升高,表面吸附的污染碳出现一定程度的减少.
Study on Photocatalytic Material Graphitic Carbon Nitrides(g-C3N4)Based on In-situ Light Irradiation-X-ray Photoelectron Spectroscopy(XPS)
When in-situ light irradiation XPS technology is used for the analysis of non-oxidized photocatalyst g-C3N4,the structure changes in the irradiation process are ignored due to the minor binding energy(BE)displacement.Using a self-built in situ irradiation XPS device,the present work verifies that the relative peak intensity of C 1s and N 1s in the conjugated structure of g-C3N4 changed significantly with 375 nm UV source(the applied light source power was greater than 15 mW)irradiation for 15 min.This is attributed to the change of chemical structure caused by electron transfer induced by light irradiation,which supplies the additional evidence for the photocatalytic mechanism research.Furthermore,with the experimental verification,the surface temperature of g-C3N4 material increases due to energy injection of ultraviolet light,which results in the pollutants desorption to a certain extent from the sample surface.

graphitic carbon nitrides(g-C3N4)in-situ light irradiationXPSphotocatalysis

徐鹏、赵志娟、章小余、郭延军

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国家纳米科学中心,北京 100190

中国科学院化学研究所,北京 100190

石墨相氮化碳(g-C3N4) 原位光辐照 X射线光电子能谱 光催化

2025

中国无机分析化学
北京矿冶研究总院

中国无机分析化学

北大核心
影响因子:1.306
ISSN:2095-1035
年,卷(期):2025.15(1)