Characterization of Thin-film Thickness Based on Conventional XPS and XRD
X-ray photoelectron spectrometer(XPS)and X-ray diffractometer(XRD)have increasingly become essential equipment in laboratories.XPS is a surface analysis technique with a typical analysis depth of about 10 nm,mainly used to characterize surface elements and their chemical states of materials.At the same time,the etching ion guns can bee used to study the depth distribution of material elements and their chemical states combined with XPS.XRD mainly utilizes the diffraction of X-rays to determine the crystal structure of materials.At the same time,the reflection of X-rays on the surface and interface of materials can be also utilized to study their physical properties,including density,thickness,roughness,etc.The lab-based conventional XPS and XRD were used to jointly characterize the thickness of multilayers thin-film sample.And combined with the advantages of both,the structural characterization of multilayers thin film was achieved through a facile and convenient method.The reflection interference fringes of multilayers thin film were tested by XRD,and the thickness information of the multilayers thin film was obtained by the Fast Fourier Transform(FFT)method.The chemical composition and longitudinal distribution of the film layers were obtained through XPS depth profiling,thus the structure of the multilayers film was fully characterized.The characterized sample was a transparent flexible conductive film with unknown composition and structure.Based on XPS and XRD analysis results,the characterized thin film was a three-layers composite film structure,with the first surface layer composed of SnO2,In2O3,TiO2 and ZnO,and a thickness of 42.6 nm.The intermediate layer consisted of 19.2 nm Ag nanowires.The substrate side layer was composed of ZnO,In2O3 and TiO2,with a thickness of 59.0 nm.This method completely avoids the complex modeling process and its uncertainty,and is very convenient and fast to characterize the multilayers thin film structure,including the thickness,composition and stacking sequence,etc.This method is of great significance in the research of thin films,quality control in production processes,and other aspects.
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