首页|A threshold voltage model for high-κgate-dielectric MOSFETs considering fringing-field effect
A threshold voltage model for high-κgate-dielectric MOSFETs considering fringing-field effect
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In this paper, a threshold voltage model for high-κgate-dielectric metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-κgate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-κgate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.
Threshold voltageMOSFETconformal mappingfringing field
Ji Feng、Xu Jing-Ping、Lai Pui-To
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Department of Electronic Science ＆ Technology, Huazhong University of Science and Technology, Wuhan 430074, China
Department of Electrical ＆ Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong, China
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