Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy

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外文摘要：We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers.The experimental results show that there are photo-generated carriers in GeSn under femtosec-ond laser excitation at 2500 nm,and its pump-induced photoconductivity can be explained by the Drude-Smith model.The carrier recombination process is mainly dominated by defect-assisted Auger processes and defect capture.The first-and second-order recombination rates are obtained by the rate equation fitting,which are(2.6±1.1)×10-2 ps-1 and(6.6±1.8)×10-19 cm3·ps-1,respectively.Meanwhile,we also obtain the diffusion length of photo-generated carriers in GeSn,which is about 0.4 μm,and it changes with the pump delay time.These results are important for the GeSn-based infrared optoelectronic devices,and demonstrate that GeSn materials can be applied to high-speed optoelectronic detectors and other applications.

外文关键词：

GeSn thin filmtime-resolved THz spectroscopyultrafast dynamicscarrier recombination

作者：

黄盼盼、张有禄、胡凯、齐静波、张岱南、程亮

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作者单位：

School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China

State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China

School of Physics,University of Electronic Science and Technology of China,Chengdu 611731,China

基金：

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Key R&D Program of China

项目编号：

120040671197407062027807522721372022YFA1403000

出版年：

2024

DOI：

10.1088/1674-1056/accf7f

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

年,卷(期)：2024.33(1)

参考文献量38