首页|Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

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The single event effect(SEE)sensitivity of silicon-germanium heterojunction bipolar transistor(SiGe HBT)irradiated by 100-MeV proton is investigated.The simulation results indicate that the most sensitive position of the SiGe HBT device is the emitter center,where the protons pass through the larger collector-substrate(CS)junction.Furthermore,in this work the experimental studies are also carried out by using 100-MeV proton.In order to consider the influence of temperature on SEE,both simulation and experiment are conducted at a temperature of 93 K.At a cryogenic temperature,the carrier mobility increases,which leads to higher transient current peaks,but the duration of the current decreases significantly.Notably,at the same proton flux,there is only one single event transient(SET)that occurs at 93 K.Thus,the radiation hard ability of the device increases at cryogenic temperatures.The simulation results are found to be qualitatively consistent with the experimental results of 100-MeV protons.To further evaluate the tolerance of the device,the influence of proton on SiGe HBT after gamma-ray(60Coy)irradiation is investigated.As a result,as the cumulative dose increases,the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

silicon-germanium heterojunction bipolar transistor(SiGe HBT)100-MeV protontechnology computer-aided design(TCAD)single event effect(SEE)

冯亚辉、郭红霞、刘益维、欧阳晓平、张晋新、马武英、张凤祁、白如雪、马晓华、郝跃

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State Key Laboratory of Wide Bandgap Semiconductor Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China

State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation,Northwest Institute of Nuclear Technology,Xi,an 710024,China

School of Space Science and Technology,Xidian University,Xi'an 710071,China

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National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of China

6157417161704127118752295187225112027813

2024

10.1088/1674-1056/acf303

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(1)
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