Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

冯亚辉 ¹郭红霞 ²刘益维 ³欧阳晓平 ⁴张晋新 ⁵马武英 ⁶张凤祁 ⁶白如雪 ³马晓华 ¹郝跃¹

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作者信息

1. State Key Laboratory of Wide Bandgap Semiconductor Devices,School of Microelectronics,Xidian University,Xi'an 710071,China
2. School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China;State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation,Northwest Institute of Nuclear Technology,Xi,an 710024,China
3. School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China
4. State Key Laboratory of Wide Bandgap Semiconductor Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation,Northwest Institute of Nuclear Technology,Xi,an 710024,China
5. School of Space Science and Technology,Xidian University,Xi'an 710071,China
6. State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation,Northwest Institute of Nuclear Technology,Xi,an 710024,China
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Abstract

The single event effect(SEE)sensitivity of silicon-germanium heterojunction bipolar transistor(SiGe HBT)irradiated by 100-MeV proton is investigated.The simulation results indicate that the most sensitive position of the SiGe HBT device is the emitter center,where the protons pass through the larger collector-substrate(CS)junction.Furthermore,in this work the experimental studies are also carried out by using 100-MeV proton.In order to consider the influence of temperature on SEE,both simulation and experiment are conducted at a temperature of 93 K.At a cryogenic temperature,the carrier mobility increases,which leads to higher transient current peaks,but the duration of the current decreases significantly.Notably,at the same proton flux,there is only one single event transient(SET)that occurs at 93 K.Thus,the radiation hard ability of the device increases at cryogenic temperatures.The simulation results are found to be qualitatively consistent with the experimental results of 100-MeV protons.To further evaluate the tolerance of the device,the influence of proton on SiGe HBT after gamma-ray(60Coy)irradiation is investigated.As a result,as the cumulative dose increases,the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

Key words

silicon-germanium heterojunction bipolar transistor(SiGe HBT)/100-MeV proton/technology computer-aided design(TCAD)/single event effect(SEE)

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基金项目

National Natural Science Foundation of China(61574171)

National Natural Science Foundation of China(61704127)

National Natural Science Foundation of China(11875229)

National Natural Science Foundation of China(51872251)

National Natural Science Foundation of China(12027813)

出版年

2024

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

参考文献量34

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