首页|Simulation of space heavy-ion induced primary knock-on atoms in bipolar devices

Simulation of space heavy-ion induced primary knock-on atoms in bipolar devices

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Bipolar junction transistors(BJTs)are often used in spacecraft due to their excellent working characteristics.However,the complex space radiation environment induces primary knock-on atoms(PKAs)in BJTs through collisions,resulting in hard-to-recover displacement damage and affecting the performance of electronic components.In this paper,the properties of PKAs induced by typical space heavy ions(C,N,O,Fe)in BJTs are investigated using Monte Carlo simulations.The simulated results show that the energy spectrum of ion-induced PKAs is primarily concentrated in the low-energy range(17 eV-100 eV)and displays similar features across all tested ions.The PKAs induced by the collision of energetic ions have large forward scattering angles,mainly around 88°.Moreover,the distribution of PKAs within a transistor as a function of depth displays a peak characteristic,and the peak position is linearly proportional to the incident energy at a certain energy range.These simulation outcomes serve as crucial theoretical support for long-term semiconductor material defect evolution and ground testing of semiconductor devices.

Monte Carlo simulationprimary knock-on atom(PKA)space-heavy ionradiation damage

张彬、姜昊、徐晓东、应涛、刘中利、李伟奇、杨剑群、李兴冀

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School of Physics,Harbin Institute of Technology,Harbin 150001,China

School of Material Science and Engineering,Harbin Institute of Technology,Harbin 150001,China

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Xi'an 710024,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaOpen Projects of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect

1197409151973046U22B204421673025SKLIPR2020

2024

10.1088/1674-1056/acd3e1

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(1)
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