Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

陈凯 ¹赵见国 ²丁宇 ¹胡文晓 ¹刘斌 ¹陶涛 ¹庄喆 ¹严羽 ¹谢自力 ¹常建华 ³张荣 ⁴郑有炓¹

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作者信息

1. Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China
2. Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China;School of Electronics and Information Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China
3. School of Electronics and Information Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China
4. Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China;Xiamen University,Xiamen 361005,China
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Abstract

Nonpolar(11-20)a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal-organic chemical vapor deposition(MOCVD)system.The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail.It is found that all the surface morphology,crystalline quality,strains,and electrical properties of nonpolar a-plane p-type GaN films are interconnected,and are closely related to the Mg-doping temperature.This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature.In fact,a hole concentration of 1.3 x 1018 cm-3,a high Mg activation efficiency of 6.5％,an activation energy of 114 meV for Mg acceptor,and a low anisotropy of 8.3％in crystalline quality were achieved with a growth temperature of 990 ℃.This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.

Key words

nonpolar a-plane GaN film/Mg-doping temperature/strains/activation efficiency

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基金项目

National Key Research and Development Program of China(2021YFB3601000)

National Key Research and Development Program of China(2021YFB3601002)

National Natural Science Foundation of China(62074077)

National Natural Science Foundation of China(61921005)

National Natural Science Foundation of China(61974062)

National Natural Science Foundation of China(62204121)

National Natural Science Foundation of China(61904082)

Leadingedge Technology Program of Jiangsu Natural Science Foundation(BE2021008-2)

China Postdoctoral Science Foundation(2020M671441)

出版年

2024

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

参考文献量41

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