首页|Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

扫码查看
原文链接
  • 万方数据
  • 维普
Nonpolar(11-20)a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal-organic chemical vapor deposition(MOCVD)system.The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail.It is found that all the surface morphology,crystalline quality,strains,and electrical properties of nonpolar a-plane p-type GaN films are interconnected,and are closely related to the Mg-doping temperature.This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature.In fact,a hole concentration of 1.3 x 1018 cm-3,a high Mg activation efficiency of 6.5％,an activation energy of 114 meV for Mg acceptor,and a low anisotropy of 8.3％in crystalline quality were achieved with a growth temperature of 990 ℃.This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.

nonpolar a-plane GaN filmMg-doping temperaturestrainsactivation efficiency

陈凯、赵见国、丁宇、胡文晓、刘斌、陶涛、庄喆、严羽、谢自力、常建华、张荣、郑有炓

展开 >

Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China

School of Electronics and Information Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China

Xiamen University,Xiamen 361005,China

National Key Research and Development Program of ChinaNational Key Research and Development Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaLeadingedge Technology Program of Jiangsu Natural Science FoundationChina Postdoctoral Science Foundation

2021YFB36010002021YFB36010026207407761921005619740626220412161904082BE2021008-22020M671441

2024

10.1088/1674-1056/acdc0b

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(1)
  • 41