首页|Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers
Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers
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A clear microscopic understanding of exchange bias is crucial for its application in magnetic recording,and further progress in this area is desired.Based on the results of our first-principles calculations and Monte Carlo simulations,we present a theoretical proposal for a stacking-dependent exchange bias in two-dimensional compensated van der Waals ferromagnetic/antiferromagnetic bilayer heterostructures.The exchange bias effect emerges in stacking registries that ac-commodate inhomogeneous interlayer magnetic interactions between the ferromagnetic layer and different spin sublattices of the antiferromagnetic layer.Moreover,the on/off switching and polarity reversal of the exchange bias can be achieved by interlayer sliding,and the strength can be modulated using an external electric field.Our findings push the limits of ex-change bias systems to extreme bilayer thickness in two-dimensional van der Waals heterostructures,potentially stimulating new experimental investigations and applications.
exchange biastwo-dimensional ferromagnetic/antiferromagnetic bilayersasymmetric magnetic interaction
李慧平、潘帅唯、王喆、向斌、朱文光
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International Center for Quantum Design of Functional Materials(ICQD),Hefei National Research Center for Physical Sciences at the Microscale,University of Science and Technology of China,Hefei 230026,China
Department of Physics,University of Science and Technology of China,Hefei 230026,China
Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China
Department of Materials Science & Engineering,University of Science and Technology of China,Hefei 230026,China
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National Key Research and Development Program of ChinaStrategic Priority Research Program of Chinese Academy of SciencesFundamental Research Funds for the Central UniversitiesNational Supercomputing Center in Tianjin
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