首页|High responsivity photodetectors based on graphene/WSe2 heterostructure by photogating effect
High responsivity photodetectors based on graphene/WSe2 heterostructure by photogating effect
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Graphene,with its zero-bandgap electronic structure,is a highly promising ultra-broadband light absorbing material.However,the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombi-nation of photoexcited carriers,leading to poor photodetection performance.Here,inspired by the photogating effect,we demonstrated a highly sensitive photodetector based on graphene/WSe2 vertical heterostructure where the WSe2 layer acts as both the light absorption layer and the localized grating layer.The graphene conductive channel is induced to produce more carriers by capacitive coupling.Due to the strong light absorption and high external quantum efficiency of multilayer WSe2,as well as the high carrier mobility of graphene,a high photocurrent is generated in the vertical heterostructure.As a result,the photodetector exhibits ultra-high responsivity of 3.85 × 104 A/W and external quantum efficiency of 1.3 x 107％.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetec-tors and may have great potential applications in future optoelectronic devices.
Suzhou Industrial Park Institute of Services Outsourcing,Suzhou 215123,China
Nano fabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China
School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China
School of Electronics and Information Engineering,Wuxi University,Wuxi 214105,China
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National Natural Science Foundation of ChinaNational Key Basic Research and Development Program of ChinaJiangsu Vocational Education Integrated Circuit Technology"Double-Qualified"Famous Teacher Studio
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