首页|Angular and planar transport properties of antiferromagnetic V5S8

Angular and planar transport properties of antiferromagnetic V5S8

扫码查看
原文链接
  • NETL
  • NSTL
  • 万方数据
Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF)V5S8.In this AF system,obvious anomalous Hall effect(AHE)is observed with a large Hall angle of 0.1 compared to that in ferro-magnetic(FM)system.It can persist to the temperatures above AF transition and exhibit strong angular field dependence.The phase diagram reveals various magnetic states by rotating the applied field.By analyzing the anisotropic transport behavior,magnon contributions are revealed and exhibit obvious angular dependence with a spin-flop vanishing line.The observed prominent planar Hall effect and anisotropic magnetoresisitivity exhibit two-fold systematical angular dependent oscillations.These behaviors are attributed to the scattering from spin-orbital coupling instead of nontrivial topological origin.Our results reveal anisotropic interactions of magnetism and electron in V5S8,suggesting potential opportunities for the AF spintronic sensor and devices.

antiferromagnetismplanar Hall effectmagnetic and topological properties

吴晓凯、王彬、吴德桐、陈博文、弭孟娟、王以林、沈冰

展开 >

Center for Neutron Science and Technology and School of Physics,Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices,and Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275,China

School of Integrated Circuits,Shandong Technology Center of Nanodevices and Integration,State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

open research fund of Songshan Lake Materials LaboratoryNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNatural Science Foundation of Guangdong ProvinceGuangzhou Basic and Applied Basic Research FoundationOpen Project of Guangdong Provincial Key Laboratory of Magnetoelectric Physics and DevicesOpen Project of Key Laboratory of Optoelectronic Materials and TechnologiesNational Key R&D Program of ChinaNational Key R&D Program of Chinacollege students innovation and entrepreneurship training program,Sun Yatsen University(national)

2021SLABFN11U2130101921652042022A15150100352022010117982022B1212010008OEMT-2023-ZTS-012023YFF07184002023YFA1406500202310359

2024

10.1088/1674-1056/ad15f9

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(2)
  • 44