Angular and planar transport properties of antiferromagnetic V5S8

吴晓凯 ¹王彬 ¹吴德桐 ¹陈博文 ¹弭孟娟 ²王以林 ²沈冰¹

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作者信息

1. Center for Neutron Science and Technology and School of Physics,Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices,and Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275,China
2. School of Integrated Circuits,Shandong Technology Center of Nanodevices and Integration,State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China
折叠

Abstract

Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF)V5S8.In this AF system,obvious anomalous Hall effect(AHE)is observed with a large Hall angle of 0.1 compared to that in ferro-magnetic(FM)system.It can persist to the temperatures above AF transition and exhibit strong angular field dependence.The phase diagram reveals various magnetic states by rotating the applied field.By analyzing the anisotropic transport behavior,magnon contributions are revealed and exhibit obvious angular dependence with a spin-flop vanishing line.The observed prominent planar Hall effect and anisotropic magnetoresisitivity exhibit two-fold systematical angular dependent oscillations.These behaviors are attributed to the scattering from spin-orbital coupling instead of nontrivial topological origin.Our results reveal anisotropic interactions of magnetism and electron in V5S8,suggesting potential opportunities for the AF spintronic sensor and devices.

Key words

antiferromagnetism/planar Hall effect/magnetic and topological properties

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基金项目

open research fund of Songshan Lake Materials Laboratory(2021SLABFN11)

National Natural Science Foundation of China(U2130101)

National Natural Science Foundation of China(92165204)

Natural Science Foundation of Guangdong Province(2022A1515010035)

Guangzhou Basic and Applied Basic Research Foundation(202201011798)

Open Project of Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices(2022B1212010008)

Open Project of Key Laboratory of Optoelectronic Materials and Technologies(OEMT-2023-ZTS-01)

National Key R&D Program of China(2023YFF0718400)

National Key R&D Program of China(2023YFA1406500)

college students innovation and entrepreneurship training program,Sun Yatsen University(national)(202310359)

出版年

2024

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

参考文献量44

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