首页|Effects of vacancy and external electric field on the electronic properties of the MoSi2N4/graphene heterostructure

Effects of vacancy and external electric field on the electronic properties of the MoSi2N4/graphene heterostructure

扫码查看
原文链接
  • 万方数据
  • 维普
Recently,the newly synthesized septuple-atomic layer two-dimensional(2D)material MoSi2N4(MSN)has attracted attention worldwide.Our work delves into the effect of vacancies and external electric fields on the electronic properties of the MSN/graphene(Gr)heterostructure using first-principles calculation.We find that four types of defective structures,N-in,N-out,Si and Mo vacancy defects of monolayer MSN and MSN/Gr heterostructure are stable in air.Moreover,vacancy defects can effectively modulate the charge transfer at the interface of the MSN/Gr heterostructure as well as the work function of the pristine monolayer MSN and MSN/Gr heterostructure.Finally,the application of an external electric field enables the dynamic switching between n-type and p-type Schottky contacts.Our work may offer the possibility of exceeding the capabilities of conventional Schottky diodes based on MSN/Gr heterostructures.

MoSi2N4vacancy defectsexternal electric fieldSchottky contacts

梁前、罗祥燕、钱国林、王远帆、梁永超、谢泉

展开 >

College of Big Data and Information Engineering,Institute of New Optoelectronic Materials and Technology,Guizhou University,Guiyang 550025,China

Industry and Education Combination Innovation Platform of Intelligent Manufacturing and Graduate Joint Training Base at Guiz国家自然科学基金High-level Creative Talent Training Program in Guizhou Province of China

2020-520000-83-01-32406161264004[2015]4015

2024

10.1088/1674-1056/acef04

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(3)
  • 46