Investigation of reflection anisotropy induced by micropipe defects on the surface of a 4H-SiC single crystal using scanning anisotropy microscopy

黄威 ¹俞金玲 ²刘雨 ³彭燕 ⁴王利军 ³梁平 ³陈堂胜 ⁵徐现刚 ⁴刘峰奇 ³陈涌海⁶

扫码查看

作者信息

1. Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China;National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing Electronic Devices Institute,Nanjing 210016,China
2. Institute of Micro/Nano Devices and Solar Cells,School of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China
3. Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
4. State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China
5. National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing Electronic Devices Institute,Nanjing 210016,China
6. Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China
折叠

Abstract

Optical reflection anisotropy microscopy mappings of micropipe defects on the surface of a 4H-SiC single crystal are studied by the scanning anisotropy microscopy(SAM)system.The reflection anisotropy(RA)image with a'butterfly pattern'is obtained around the micropipes by SAM.The RA image of the edge dislocations is theoretically simulated based on dislocation theory and the photoelastic principle.By comparing with the Raman spectrum,it is verified that the micropipes consist of edge dislocations.The different patterns of the RA images are due to the different orientations of the Burgers vectors.Besides,the strain distribution of the micropipes is also deduced.One can identify the dislocation type,the direction of the Burgers vector and the optical anisotropy from the RA image by using SAM.Therefore,SAM is an ideal tool to measure the optical anisotropy induced by the strain field around a defect.

Key words

scanning anisotropy microscopy/SiC/reflection anisotropy/edge dislocation

引用本文复制引用

基金项目

国家重点研发计划(2018YFE0204001)

国家重点研发计划(2018YFA0209103)

国家重点研发计划(2016YFB0400101)

国家重点研发计划(2016YFB0402303)

国家自然科学基金(61627822)

国家自然科学基金(61704121)

国家自然科学基金(61991430)

国家自然科学基金(62074036)

Postdoctoral Research Program of Jiangsu Province(2021K599C)

出版年

2024

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

参考文献量35

段落导航