Investigation of reflection anisotropy induced by micropipe defects on the surface of a 4H-SiC single crystal using scanning anisotropy microscopy

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外文摘要：Optical reflection anisotropy microscopy mappings of micropipe defects on the surface of a 4H-SiC single crystal are studied by the scanning anisotropy microscopy(SAM)system.The reflection anisotropy(RA)image with a'butterfly pattern'is obtained around the micropipes by SAM.The RA image of the edge dislocations is theoretically simulated based on dislocation theory and the photoelastic principle.By comparing with the Raman spectrum,it is verified that the micropipes consist of edge dislocations.The different patterns of the RA images are due to the different orientations of the Burgers vectors.Besides,the strain distribution of the micropipes is also deduced.One can identify the dislocation type,the direction of the Burgers vector and the optical anisotropy from the RA image by using SAM.Therefore,SAM is an ideal tool to measure the optical anisotropy induced by the strain field around a defect.

外文关键词：

scanning anisotropy microscopySiCreflection anisotropyedge dislocation

作者：

黄威、俞金玲、刘雨、彭燕、王利军、梁平、陈堂胜、徐现刚、刘峰奇、陈涌海

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作者单位：

Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing Electronic Devices Institute,Nanjing 210016,China

Institute of Micro/Nano Devices and Solar Cells,School of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China

State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

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基金：

国家重点研发计划国家重点研发计划国家重点研发计划国家重点研发计划国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金Postdoctoral Research Program of Jiangsu Province

项目编号：

2018YFE02040012018YFA02091032016YFB04001012016YFB0402303616278226170412161991430620740362021K599C

出版年：

2024

DOI：

10.1088/1674-1056/acf27f

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

年,卷(期)：2024.33(3)

参考文献量35