Anomalous valley Hall effect in two-dimensional valleytronic materials

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外文摘要：The anomalous valley Hall effect(AVHE)can be used to explore and utilize valley degrees of freedom in materials,which has potential applications in fields such as information storage,quantum computing and optoelectronics.AVHE exists in two-dimensional(2D)materials possessing valley polarization(VP),and such 2D materials usually belong to the hexagonal honeycomb lattice.Therefore,it is necessary to achieve valleytronic materials with VP that are more readily to be synthesized and applicated experimentally.In this topical review,we introduce recent developments on realizing VP as well as AVHE through different methods,i.e.,doping transition metal atoms,building ferrovalley heterostructures and searching for ferrovalley materials.Moreover,2D ferrovalley systems under external modulation are also discussed.2D valleytronic materials with AVHE demonstrate excellent performance and potential applications,which offer the possibility of realizing novel low-energy-consuming devices,facilitating further development of device technology,realizing miniaturization and enhancing functionality of them.

外文关键词：

anomalous valley Hall effectvalley polarizationvalleytronicstwo-dimensional materials

作者：

陈洪欣、原晓波、任俊峰

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作者单位：

School of Physics and Electronics,Shandong Normal University,Jinan 250358,China

Shandong Provincial Engineering and Technical Center of Light Manipulations & Institute of Materials and Clean Energy,Shandong Normal University,Jinan 250358,China

基金：

国家自然科学基金国家自然科学基金山东省自然科学基金山东省自然科学基金Qing-Chuang Science and Technology Plan of Shandong Province of China

项目编号：

1227426411674197ZR2022MA039ZR2021MA1052019KJJ014

出版年：

2024

DOI：

10.1088/1674-1056/ad1c59

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

年,卷(期)：2024.33(4)

参考文献量136