首页|Localization effect in single crystal of RuAs2

Localization effect in single crystal of RuAs2

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We report the magnetotransport and thermal properties of RuAs2 single crystal.RuAs2 exhibits semiconductor be-havior and localization effect.The crossover from normal state to diffusive transport in the weak localization(WL)state and then to variable range hopping(VRH)transport in the strong localization state has been observed.The transitions can be reflected in the measurement of resistivity and Seebeck coefficient.Negative magnetoresistance(NMR)emerges with the appearance of localization effect and is gradually suppressed in high magnetic field.The temperature dependent phase coherence length extracted from the fittings of NMR also indicates the transition from WL to VRH.The measurement of Hall effect reveals an anomaly of temperature dependent carrier concentration caused by localization effect.Our findings show that RuAs2 is a suitable platform to study the localized state.

weak localizationvariable range hoppingRuAs2 single crystal

易哲铠、刘琪、光双魁、徐升、岳小宇、梁慧、李娜、周颖、吴丹丹、孙燕、李秋菊、程鹏、夏天龙、孙学峰、王义炎

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Anhui Key Laboratory of Magnetic Functional Materials and Devices,Institute of Physical Science and Information Technology,Anhui University,Hefei 230601,China

Department of Physics and Key Laboratory of Strongly-Coupled Quantum Matter Physics(CAS),University of Science and Technology of China,Hefei 230026,China

Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices,Renmin University of China,Beijing 100872,China

School of Optical and Electronic Information,Suzhou City University,Suzhou 215104,China

School of Physics and Optoelectronic Engineering,Anhui University,Hefei 230601,China

Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China

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国家重点研发计划国家重点研发计划国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金安徽省自然科学基金安徽省自然科学基金

2023YFA14065002019YFA0308602121040111227438812074425521023331210401012204004118744222108085QA222108085MA16

2024

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子:0.995
ISSN:1674-1056
年,卷(期):2024.33(4)
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