Stable photocurrent-voltage characteristics of perovskite single crystal detectors obtained by pulsed bias

刘新 ¹陈之龙 ²王虎 ¹张雯清 ¹董昊 ³王鹏祥 ¹邵宇川⁴

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作者信息

1. Laboratory of Thin Film Optics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Key Laboratory of Materials for High-Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China
2. Laboratory of Thin Film Optics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Key Laboratory of Materials for High-Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Key Laboratory for Ultrafine Materials of Ministry of Education,Shanghai Engineering Research Center of Hierarchical Nanomaterials,School of Materials Science and Engineering,East China University of Science and Technology,Shanghai 2002
3. Laboratory of Thin Film Optics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Key Laboratory of Materials for High-Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;School of Microelectronics,Shanghai University,Shanghai 201899,China
4. Laboratory of Thin Film Optics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Key Laboratory of Materials for High-Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China
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Abstract

Photocurrent-voltage characterization is a crucial method for assessing key parameters in x-ray or y-ray semiconduc-tor detectors,especially the carrier mobility lifetime product.However,the high biases during photocurrent measurements tend to cause severe ion migration,which can lead to the instability and inaccuracy of the test results.Given the mixed electronic-ionic characteristics,it is imperative to devise novel methods capable of precisely measuring photocurrent-voltage characteristics under high bias conditions,free from interference caused by ion migration.In this paper,pulsed bias is employed to explore the photocurrent-voltage characteristics of MAPbBr3 single crystals.The method yields stable photocurrent-voltage characteristics at a pulsed bias of up to 30 V,proving to be effective in mitigating ion migration.Through fitting the modified Hecht equation,we determined the mobility lifetime products of 1.0×10-2 cm2·V-1 for hole and 2.78 × 10-3 cm2·V-1 for electron.This approach offers a promising solution for accurately measuring the transport properties of carriers in perovskite.

Key words

perovskites/ion migration/pulsed bias/mobility lifetime product

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基金项目

国家自然科学基金(62104234)

Shanghai Explorer Program(22TS1400100)

出版年

2024

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

参考文献量31

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