Abstract
CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless com-munication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si)wafers,especially in the high-frequency range.In this paper,we have studied the major factors that influence the secondary-electron yield(SEY)in commercial Si wafers with different doping concentrations.We show that the SEY is suppressed as the doping concentration increases,corresponding to a relatively short effective escape depth λ.Mean-while,the reduced narrow band gap is beneficial in suppressing the SEY,in which the absence of a shallow energy band below the conduction band will easily capture electrons,as revealed by first-principles calculations.Thus,the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.
基金项目
Administration of Science.Technology and Industry of National Defense of China(HTKJ2021KL504001)
国家自然科学基金(12004297)
国家自然科学基金(12174364)
中国博士后科学基金(2022M712507)
中央高校基本科研业务费专项(xzy01202003)
高等学校学科创新引智计划(111计划)(B14040)
Instrument Analysis Center of Xi'an Jiaotong University()
维普
万方数据