首页|Physical mechanism of secondary-electron emission in Si wafers

Physical mechanism of secondary-electron emission in Si wafers

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CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless com-munication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si)wafers,especially in the high-frequency range.In this paper,we have studied the major factors that influence the secondary-electron yield(SEY)in commercial Si wafers with different doping concentrations.We show that the SEY is suppressed as the doping concentration increases,corresponding to a relatively short effective escape depth λ.Mean-while,the reduced narrow band gap is beneficial in suppressing the SEY,in which the absence of a shallow energy band below the conduction band will easily capture electrons,as revealed by first-principles calculations.Thus,the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.

secondary-electron yielddoping concentrationescape depthSi wafer

赵亚楠、孟祥兆、彭淑婷、苗光辉、高玉强、彭斌、崔万照、胡忠强

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State Key Laboratory for Manufacturing Systems Engineering,Electronic Materials Research Laboratory,Key Laboratory of the Ministry of Education,Engineering Research Center of Spin Quantum Sensor Chips,Universities of Shaanxi Province,School of Electronic Science and Engineering,Xi'an Jiaotong University,Xi'an 710049,China

College of Aeronautics,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China

National Key Laboratory of Science and Technology on Space Microwave,China Academy of Space Technology(Xi'an),Xi'an 710100,China

Department of Physics,School of Physics and Electronic Information,Anhui Normal University,Wuhu 241000,China

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Administration of Science.Technology and Industry of National Defense of China国家自然科学基金国家自然科学基金中国博士后科学基金中央高校基本科研业务费专项高等学校学科创新引智计划(111计划)Instrument Analysis Center of Xi'an Jiaotong University

HTKJ2021KL50400112004297121743642022M712507xzy01202003B14040

2024

10.1088/1674-1056/ad1175

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(4)
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