首页|Effect of external magnetic field on the instability of THz plasma waves in nanoscale graphene field-effect transistors

Effect of external magnetic field on the instability of THz plasma waves in nanoscale graphene field-effect transistors

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The instability of plasma waves in the channel of field-effect transistors will cause the electromagnetic waves with THz frequency.Based on a self-consistent quantum hydrodynamic model,the instability of THz plasmas waves in the channel of graphene field-effect transistors has been investigated with external magnetic field and quantum effects.We analyzed the influence of weak magnetic fields,quantum effects,device size,and temperature on the instability of plasma waves under asymmetric boundary conditions numerically.The results show that the magnetic fields,quantum effects,and the thickness of the dielectric layer between the gate and the channel can increase the radiation frequency.Additionally,we observed that increase in temperature leads to a decrease in both oscillation frequency and instability increment.The numerical results and accompanying images obtained from our simulations provide support for the above conclusions.

graphene field-effect transistorsexternal magnetic fieldradiation frequencyinstability increment

张丽萍、孙宗耀、李佳妮、苏俊燕

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School of Sciences,Lanzhou University of Technology,Lanzhou 730050,China

国家自然科学基金Hongliu Firstlevel Discipline Construction Project of Lanzhou University of Technology

12065015

2024

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子:0.995
ISSN:1674-1056
年,卷(期):2024.33(4)
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