首页|Interfacial DMI in Fe/Pt thin films grown on different buffer layers

Interfacial DMI in Fe/Pt thin films grown on different buffer layers

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We study the interfacial Dzyaloshinskii-Moriya interactions(i-DMI)of Fe/Pt bilayers grown on Si substrates with MgO,SiO2,or Ta each as a buffer layer on the basis of wave-vector-resolved Brillouin light scattering(BLS)measurement.The obtained i-DMI energy values for Fe/Pt on MgO,Ta,and SiO2 buffer layers are 0.359,0.321,and 0.274 mJ/m2,respectively.The large i-DMI value observed in Fe/Pt system on the MgO buffer layer can be attributed to the good interfacial quality and the Rshaba effect at the MgO/Fe interface.Moreover,the MgO/Fe/Pt system,benefiting from better sample quality,exhibits a lower damping factor.Furthermore,layer-resolved first-principles calculations are carried out to gain a more in-depth understanding of the origin of the i-DMI in the Fe/Pt system.The results indicate that in the Fe(110)/Pt(111)system,the substantial DMI energy between Fe spins at the interface is related to a significant change in spin-orbit coupling(SOC)energy in the neighboring Pt layer.In contrast,for the MgO(002)/Fe(002)system,both the DMI and its related SOC energy are concentrated at the interfacial Fe layer.Our investigation will provide a valuable insight into the spintronic community in exploring novel devices with chirality dependence.

Fe/Pti-DMIBLSferromagnetic resonancemagnetic relaxation

张文君、魏菲、刘冰、周阳、康仕寿、孙兵

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School of Physics and Electronic Information,Weifang University,Weifang 261061,China

School of Physics and State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

国家重点基础研究发展计划(973计划)国家重点基础研究发展计划(973计划)国家重点基础研究发展计划(973计划)国家重点基础研究发展计划(973计划)山东省自然科学基金

12074220123041511220435512204356ZR2022QA085

2024

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子:0.995
ISSN:1674-1056
年,卷(期):2024.33(4)
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