首页|Investigation of helicity-dependent photocurrent of surface states in(Bi0.7Sb0.3)2Te3 nanoplate

Investigation of helicity-dependent photocurrent of surface states in(Bi0.7Sb0.3)2Te3 nanoplate

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Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi0.7Sb0.3)2Te3 nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi0.7Sb0.3)2Te3 nanoplate is regulated by temperature,light power,excitation wavelength,the source-drain and ionic liquid top-gate volt-ages,and the regulation mechanisms are discussed.It is demonstrated that(Bi0.7Sb0.3)2Te3 nanoplates may provide a good platform for novel opto-spintronics devices.

(Bi0.7Sb0.3)2Te3 nanoplatehelicity-dependent photocurrentcircular photogalvanic effectionic liquid gating

喻钦、俞金玲、陈涌海、赖云锋、程树英、何珂

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School of Advanced Manufacturing,Fuzhou University,Quanzhou 362251,China

Institute of Micro/Nano Devices and Solar Cells,School of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China

Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering,Changzhou University,Changzhou 213164,China

Department of Physics,State Key Laboratory of Low Dimensional Quantum Physics,Tsinghua University,Beijing 100084,China

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国家自然科学基金国家自然科学基金国家自然科学基金Foreign Cooperation Project of Fujian Province,ChinaOpen Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics国家重点研发计划Foundation of Fujian Provincial Department of Industry and Information Technology of China

6207403661674038115743022023I0005KF2021082016YFB040230382318075

2024

10.1088/1674-1056/ad322c

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(5)
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