中国物理B(英文版)2024,Vol.33Issue(5) :595-601.DOI:10.1088/1674-1056/ad260c

Effect of strain on structure and electronic properties of monolayer C4N4

陈昊 徐瑛 赵家石 周丹
中国物理B(英文版)2024,Vol.33Issue(5) :595-601.DOI:10.1088/1674-1056/ad260c

Effect of strain on structure and electronic properties of monolayer C4N4

陈昊 1徐瑛 1赵家石 2周丹1
扫码查看

作者信息

  • 1. School of Physics,Changchun University of Science and Technology,Changchun 130022,China
  • 2. School of Computer Science and Technology,Changchun University of Science and Technology,Changchun 130022,China
  • 折叠

Abstract

The first-principles calculations are performed to examine structural,mechanical,and electronic properties at large strain for a monolayer C4N4,which has been predicted as an anchoring promising material to attenuate shuttle effect in Li-S batteries stemming from its large absorption energy and low diffusion energy barrier.Our results show that the ideal strengths of C4N4 under tension and pure shear deformation conditions reach 13.9 GPa and 12.5 GPa when the strains are 0.07 and 0.28,respectively.The folded five-membered rings and diverse bonding modes between carbon and nitrogen atoms enhance the ability to resist plastic deformation of C4N4.The orderly bond-rearranging behaviors under the weak tensile loading path along the[100]direction cause the impressive semiconductor-metal transition and inverse semiconductor-metal transition.The present results enrich the knowledge of the structure and electronic properties of C4N4 under deformations and shed light on exploring other two-dimensional materials under diverse loading conditions.

Key words

two-dimensional materials/strain effect/structural evolution/electronic properties

引用本文复制引用

基金项目

国家自然科学基金(11704044)

国家自然科学基金(12074140)

出版年

2024
中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子:0.995
ISSN:1674-1056
参考文献量44
段落导航相关论文