Abstract
Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties.New Bi-based perovskite thin films Bi(Cu1/2Ti1/2)O3-PbTiO3(BCT-PT)are deposited on Pt(111)/Ti/SiO2/Si substrates in the present study by the traditional sol-gel method.Their structures and related ferro-electric and fatigue characteristics are studied in-depth.The BCT-PT thin films exhibit good crystallization within the phase-pure perovskite structure,besides,they have a predominant(100)orientation together with a dense and homoge-neous microstructure.The remnant polarization(2Pr)values at 30 μC/cm2 and 16 μC/cm2 are observed in 0.1BCT-0.9PT and 0.2BCT-0.8PT thin films,respectively.More intriguingly,although the polarization values are not so high,0.2BCT-0.8PT thin films show outstanding polarization fatigue properties,with a high switchable polarization of 93.6％of the starting values after 108 cycles,indicating promising applications in ferroelectric memories.
基金项目
国家重点研发计划(2021YFA1400300)
国家自然科学基金(22271309)
国家自然科学基金(21805215)
国家自然科学基金(11934017)
国家自然科学基金(12261131499)
国家自然科学基金(11921004)
北京市自然科学基金(Z200007)
Fund from the Chinese Academy of Sciences(XDB33000000)
NETL
NSTL
万方数据