首页|Structure,ferroelectric,and enhanced fatigue properties of sol-gel-processed new Bi-based perovskite thin films of Bi(Cu1/2Ti1/2)O3-PbTiO3
Structure,ferroelectric,and enhanced fatigue properties of sol-gel-processed new Bi-based perovskite thin films of Bi(Cu1/2Ti1/2)O3-PbTiO3
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Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties.New Bi-based perovskite thin films Bi(Cu1/2Ti1/2)O3-PbTiO3(BCT-PT)are deposited on Pt(111)/Ti/SiO2/Si substrates in the present study by the traditional sol-gel method.Their structures and related ferro-electric and fatigue characteristics are studied in-depth.The BCT-PT thin films exhibit good crystallization within the phase-pure perovskite structure,besides,they have a predominant(100)orientation together with a dense and homoge-neous microstructure.The remnant polarization(2Pr)values at 30 μC/cm2 and 16 μC/cm2 are observed in 0.1BCT-0.9PT and 0.2BCT-0.8PT thin films,respectively.More intriguingly,although the polarization values are not so high,0.2BCT-0.8PT thin films show outstanding polarization fatigue properties,with a high switchable polarization of 93.6％of the starting values after 108 cycles,indicating promising applications in ferroelectric memories.
ferroelectricthin filmsperovskitePbTiO3-BiMeO3
宋伟宾、席国强、潘昭、刘锦、叶旭斌、刘哲宏、王潇、单鹏飞、张林兴、鲁年鹏、樊龙龙、秦晓梅、龙有文
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Department of Physics,Shanghai Normal University,Shanghai 200234,China
Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China
Institute for Advanced Materials Technology,University of Science and Technology Beijing,Beijing 100083,China
Songshan Lake Materials Laboratory,Dongguan 523808,China
Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China
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国家重点研发计划国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金北京市自然科学基金Fund from the Chinese Academy of Sciences
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