Abstract
Conventional theories expect that materials under pressure exhibit expanded valence and conduction bands,leading to increased electrical conductivity.Here,we report the electrical properties of the doped lT-TiS2 under high pressure by electrical resistance investigations,synchrotron x-ray diffraction,Raman scattering and theoretical calculations.Up to 70 GPa,an unusual metal-semiconductor-metal transition occurs.Our first-principles calculations suggest that the observed anti-Wilson transition from metal to semiconductor at 17 GPa is due to the electron localization induced by the intercalated Ti atoms.This electron localization is attributed to the strengthened coupling between the doped Ti atoms and S atoms,and the Anderson localization arising from the disordered intercalation.At pressures exceeding 30.5 GPa,the doped TiS2 undergoes a re-metallization transition initiated by a crystal structure phase transition.We assign the most probable space group as P212121.Our findings suggest that materials probably will eventually undergo the Wilson transition when subjected to sufficient pressure.
基金项目
staff of the BL15U1 beamline of Shanghai Synchrotron Radiation Facility(SSRF)()
国家自然科学基金(12304072)
Program for Science and Technology Innovation Team in Zhejiang(2021R01004)
Natural Science Foundation of Ningbo(2021J121)
User Experiment Assist System of Shanghai Synchrotron Radiation Facility(SSRF)()
NETL
NSTL
万方数据