Unveiling the pressure-driven metal-semiconductor-metal transition in the doped TiS2

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外文摘要：Conventional theories expect that materials under pressure exhibit expanded valence and conduction bands,leading to increased electrical conductivity.Here,we report the electrical properties of the doped lT-TiS2 under high pressure by electrical resistance investigations,synchrotron x-ray diffraction,Raman scattering and theoretical calculations.Up to 70 GPa,an unusual metal-semiconductor-metal transition occurs.Our first-principles calculations suggest that the observed anti-Wilson transition from metal to semiconductor at 17 GPa is due to the electron localization induced by the intercalated Ti atoms.This electron localization is attributed to the strengthened coupling between the doped Ti atoms and S atoms,and the Anderson localization arising from the disordered intercalation.At pressures exceeding 30.5 GPa,the doped TiS2 undergoes a re-metallization transition initiated by a crystal structure phase transition.We assign the most probable space group as P212121.Our findings suggest that materials probably will eventually undergo the Wilson transition when subjected to sufficient pressure.

外文关键词：

high pressuretransition metal dichalcogenidesdoped TiS2electronic phase transition

作者：

陈佳骏、吕心邓、李思敏、但雅倩、黄艳萍、崔田

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作者单位：

Institute of High Pressure Physics,School of Physical Science and Technology,Ningbo University,Ningbo 315211,China

State Key Laboratory of Superhard Materials,College of Physics,Jilin University,Changchun 130012,China

基金：

staff of the BL15U1 beamline of Shanghai Synchrotron Radiation Facility(SSRF)国家自然科学基金Program for Science and Technology Innovation Team in ZhejiangNatural Science Foundation of NingboUser Experiment Assist System of Shanghai Synchrotron Radiation Facility(SSRF)

项目编号：

123040722021R010042021J121

出版年：

2024

DOI：

10.1088/1674-1056/ad4325

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

年,卷(期)：2024.33(6)

参考文献量26