首页|Surface doping manipulation of the insulating ground states in Ta2Pd3Te5 and Ta2Ni3Te5

Surface doping manipulation of the insulating ground states in Ta2Pd3Te5 and Ta2Ni3Te5

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Manipulating emergent quantum phenomena is a key issue for understanding the underlying physics and contributing to possible applications.Here we study the evolution of insulating ground states of Ta2Pd3Te5 and Ta2Ni3Te5 under in-situ surface potassium deposition via angle-resolved photoemission spectroscopy.Our results confirm the excitonic insulator character of Ta2Pd3Te5.Upon surface doping,the size of its global gap decreases obviously.After a deposition time of more than 7 min,the potassium atoms induce a metal-insulator phase transition and make the system recover to a normal state.In contrast,our results show that the isostructural compound Ta2Ni3Te5 is a conventional insulator.The size of its global gap decreases upon surface doping,but persists positive throughout the doping process.Our results not only confirm the excitonic origin of the band gap in Ta2Pd3Te5,but also offer an effective method for designing functional quantum devices in the future.

excitonic insulatormetal-insulator phase transitionsurface dopingangle-resolved photoemis-sion spectroscopy

江北、姚静宇、闫大禹、郭照芃、屈歌星、邓修同、黄耀波、丁洪、石友国、王志俊、钱天

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Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

University of Chinese Academy of Sciences,Beijing 100049,China

Shanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201204,China

Tsung-Dao Lee Institute,New Cornerstone Science Laboratory,and School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 201210,China

Hefei National Laboratory,Hefei 230088,China

Songshan Lake Materials Laboratory,Dongguan 523808,China

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Ministry of Science and Technology of China国家自然科学基金国家自然科学基金国家自然科学基金中国科学院项目Synergetic Extreme Condition User Facility(SECUF)Center for Materials Genome

2022YFA1403800U203220412188101U22A6005XDB33000000

2024

10.1088/1674-1056/ad362e

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(6)
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