Electric field dependence of spin qubit in a Si-MOS quantum dot

马荣龙 ¹倪铭 ¹周雨晨 ¹孔真真 ²王桂磊 ³刘頔 ¹罗刚 ¹曹刚 ⁴李海欧 ⁴郭国平⁵

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作者信息

1. CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China;CAS Center for Excellence in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China
2. Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
3. Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Beijing Superstring Academy of Memory Technology,Beijing 100176,China;Hefei National Laboratory,University of Science and Technology of China,Hefei 230088,China
4. CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China;CAS Center for Excellence in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China;Hefei National Laboratory,University of Science and Technology of China,Hefei 230088,China
5. CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China;CAS Center for Excellence in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China;Hefei National Laboratory,University of Science and Technology of China,Hefei 230088,China;Origin Quantum Computing Company Limited,Hefei 230026,China
折叠

Abstract

Valley,the intrinsic feature of silicon,is an inescapable subject in silicon-based quantum computing.At the spin-valley hotspot,both Rabi frequency and state relaxation rate are significantly enhanced.With protection against charge noise,the valley degree of freedom is also conceived to encode a qubit to realize noise-resistant quantum computing.Here,based on the spin qubit composed of one or three electrons,we characterize the intrinsic properties of valley in an isotopically enriched silicon quantum dot(QD)device.For one-electron qubit,we measure two electric-dipole spin resonance(EDSR)signals which are attributed to partial occupation of two valley states.The resonance frequencies of two EDSR signals have opposite electric field dependences.Moreover,we characterize the electric field dependence of the upper valley state based on three-electron qubit experiments.The difference of electric field dependences of the two valleys is 52.02 MHz/V,which is beneficial for tuning qubit frequency to meet different experimental requirements.As an extension of electrical control spin qubits,the opposite electric field dependence is crucial for qubit addressability,individual single-qubit control and two-qubit gate approaches in scalable quantum computing.

Key words

silicon-based quantum computing/valley/electric-dipole spin resonance

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基金项目

国家自然科学基金(12074368)

国家自然科学基金(92165207)

国家自然科学基金(12034018)

国家自然科学基金(92265113)

Innovation Program for Quantum Science and Technology(2021ZD0302300)

安徽省自然科学基金(2108085J03)

USTC Tang Scholarship()

出版年

2024

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

参考文献量54

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