首页|Wafer-scale 30° twisted bilayer graphene epitaxially grown on Cu0.75Ni0.25(111)

Wafer-scale 30° twisted bilayer graphene epitaxially grown on Cu0.75Ni0.25(111)

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Twisted bilayer graphene(TBG)has been extensively studied because of its novel physical properties and poten-tial application in electronic devices.Here we report the synthesis and characterization of 30° TBG naturally grown on Cu0.75Ni0.25(111)film and investigate the electronic structure by angle-resolved photoemission spectroscopy.Compared with other substrates,our TBG with a wafer scale is acquired with a shorter growth time.The Fermi velocity and energy gap of Dirac cones of TBG are comparable with those of a monolayer on Cu0.85Ni0.15(111).The signature of moiré lattices has not been observed in either the low-energy electron diffraction patterns or the Fermi surface map within experimental resolution,possibly due to different Cu and Ni contents in the substrates enhancing the different couplings between the substrate and the first/second layers and hindering the formation of a quasiperiodic structure.

twisted bilayer grapheneelectronic structureCu/Ni(111)

马鹏程、张翱、甄洪润、江志诚、杨逸尘、丁建阳、刘正太、刘吉山、沈大伟、于庆凯、刘丰、张学富、刘中灏

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School of Physical Science and Technology,Ningbo University,Ningbo 315211,China

Institute of High-Pressure Physics,Ningbo University,Ningbo 315211,China

National Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029,China

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国家重点研发计划国家重点研发计划国家自然科学基金国家自然科学基金上海市自然科学基金上海市自然科学基金浙江省自然科学基金funding of Ningbo University

2022YFB36080002022YFA1204900122224131207420523ZR148220022ZR1473300LQ21A040004LJ2024003

2024

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子:0.995
ISSN:1674-1056
年,卷(期):2024.33(6)
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