首页|Observing ferroelastic switching in Hf0.5Zr0.5O2 thin film

Observing ferroelastic switching in Hf0.5Zr0.5O2 thin film

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Hafnium zirconium oxides(HZO),which exhibit ferroelectric properties,are promising materials for nanoscale device fabrication due to their high complementary metal-oxide-semiconductor(CMOS)compatibility.In addition to piezoelec-tricity,ferroelectricity,and flexoelectricity,this study reports the observation of ferroelasticity using piezoelectric force microscopy(PFM)and scanning transmission electron microscopy(STEM).The dynamics of 90° ferroelastic domains in HZO thin films are investigated under the influence of an electric field.Switching of the retentive domains is observed through repeated wake-up measurements.This study presents a possibility of enhancing polarization in HZO thin films during wake-up processes.

HfO2-based ferroelectricsferroelasticitypiezoelectric force microscopy(PFM)

关赵、王陶、郑赟喆、彭悦、魏鹿奇、张宇科、阿卜力孜·麦提图尔荪、黄家豪、童文旖、韩根全、陈斌斌、向平华、段纯刚、钟妮

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Key Laboratory of Polar Materials and Devices,Ministry of Education,Shanghai Center of Brain-inspired Intelligent Materials and Devices,East China Normal University,Shanghai 200241,China

School of Microelectronics,Xidian University,Xi'an 710071,China

Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China

the National Key Research and Development Program of China国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金Chenguang Program Foundation of Shanghai Education Development Foundation and Shanghai Municipal Education Commission,ECNU(E中央高校基本科研业务费专项

2022YFA140290212074119122041711213400312374145006

2024

10.1088/1674-1056/ad362f

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(6)
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