Observing ferroelastic switching in Hf0.5Zr0.5O2 thin film

关赵 ¹王陶 ¹郑赟喆 ¹彭悦 ²魏鹿奇 ¹张宇科 ¹阿卜力孜·麦提图尔荪 ¹黄家豪 ¹童文旖 ¹韩根全 ²陈斌斌 ³向平华 ³段纯刚 ³钟妮³

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作者信息

1. Key Laboratory of Polar Materials and Devices,Ministry of Education,Shanghai Center of Brain-inspired Intelligent Materials and Devices,East China Normal University,Shanghai 200241,China
2. School of Microelectronics,Xidian University,Xi'an 710071,China
3. Key Laboratory of Polar Materials and Devices,Ministry of Education,Shanghai Center of Brain-inspired Intelligent Materials and Devices,East China Normal University,Shanghai 200241,China;Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China
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Abstract

Hafnium zirconium oxides(HZO),which exhibit ferroelectric properties,are promising materials for nanoscale device fabrication due to their high complementary metal-oxide-semiconductor(CMOS)compatibility.In addition to piezoelec-tricity,ferroelectricity,and flexoelectricity,this study reports the observation of ferroelasticity using piezoelectric force microscopy(PFM)and scanning transmission electron microscopy(STEM).The dynamics of 90° ferroelastic domains in HZO thin films are investigated under the influence of an electric field.Switching of the retentive domains is observed through repeated wake-up measurements.This study presents a possibility of enhancing polarization in HZO thin films during wake-up processes.

Key words

HfO2-based ferroelectrics/ferroelasticity/piezoelectric force microscopy(PFM)

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基金项目

the National Key Research and Development Program of China(2022YFA1402902)

国家自然科学基金(12074119)

国家自然科学基金(12204171)

国家自然科学基金(12134003)

国家自然科学基金(12374145)

Chenguang Program Foundation of Shanghai Education Development Foundation and Shanghai Municipal Education Commission,ECNU(E(006)

中央高校基本科研业务费专项()

出版年

2024

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

参考文献量39

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