首页|Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb2Te3-GeTe superlattices

Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb2Te3-GeTe superlattices

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Chalcogenide superlattices Sb2Te3-GeTe is a candidate for interfacial phase-change memory(iPCM)data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy together,we investigate the ultrafast photoexcited carrier dynamics and current transients in Sb2Te3-GeTe superlattices.Sample orientation and excitation polarization dependences of the THz emission confirm that ultrafast thermo-electric,shift and injection currents contribute to the THz generation in Sb2Te3-GeTe superlattices.By decreasing the thickness and increasing the number of GeTe and Sb2Te3 layer,the interlayer coupling can be enhanced,which significantly reduces the contribution from circular photo-galvanic effect(CPGE).A photo-induced bleaching in the transient reflectance spectroscopy probed in the range of～1100 nm to～1400 nm further demonstrates a gapped state resulting from the interlayer coupling.These demonstrates play an important role in the development of iPCM-based high-speed optoelectronic devices.

Sb2Te3/GeTe superlatticesultrafast carrier dynamicsinterfacial phase change memoryTHz emission spectroscopytransient reflectance spectroscopy

叶之江、金钻明、蒋叶昕、卢琦、贾梦辉、钱冬、黄夏敏、李舟、彭滟、朱亦鸣

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Terahertz Technology Innovation Research Institute,Terahertz Spectrum and Imaging Technology Cooperative Innovation Center,Shanghai Key Laboratory of Modem Optical System,University of Shanghai for Science and Technology,Shanghai 200093,China

Shanghai Institute of Intelligent Science and Technology,Tongji University,Shanghai 200092,China

Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education),Shenyang National Laboratory for Materials Science,School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China

State Key Laboratory of Precision Spectroscopy,East China Normal University,Shanghai 200062,China

Tsung-Dao Lee Institute,Shanghai Jiao Tong University,Shanghai 200240,China

GBA Branch of Aerospace Information Research Institute,Chinese Academy of Sciences,Guangzhou 510700,China

Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics,Guangzhou 510700,China

University of Chinese Academy of Sciences,Beijing 100039,China

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National Key Research and Development Program of ChinaNational Key Research and Development Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of China111 ProjectKey Project supported by Science and Technology Commission Shanghai MunicipalityScience and Technology Commission of Shanghai MunicipalityScience and Technology Commission of Shanghai MunicipalityGeneral Administration of Customs People's Republic of China

2023YFF07192002022YFA14040046232211561988102619751106233501212074248D18014YDZX2019310000496022JC140020021S319074002019HK006

2024

10.1088/1674-1056/ad432a

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(7)
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