Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb2Te3-GeTe superlattices

叶之江 ¹金钻明 ²蒋叶昕 ¹卢琦 ³贾梦辉 ⁴钱冬 ⁵黄夏敏 ⁶李舟 ⁷彭滟 ²朱亦鸣²

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作者信息

1. Terahertz Technology Innovation Research Institute,Terahertz Spectrum and Imaging Technology Cooperative Innovation Center,Shanghai Key Laboratory of Modem Optical System,University of Shanghai for Science and Technology,Shanghai 200093,China
2. Terahertz Technology Innovation Research Institute,Terahertz Spectrum and Imaging Technology Cooperative Innovation Center,Shanghai Key Laboratory of Modem Optical System,University of Shanghai for Science and Technology,Shanghai 200093,China;Shanghai Institute of Intelligent Science and Technology,Tongji University,Shanghai 200092,China
3. Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education),Shenyang National Laboratory for Materials Science,School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China
4. State Key Laboratory of Precision Spectroscopy,East China Normal University,Shanghai 200062,China
5. Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education),Shenyang National Laboratory for Materials Science,School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China;Tsung-Dao Lee Institute,Shanghai Jiao Tong University,Shanghai 200240,China
6. GBA Branch of Aerospace Information Research Institute,Chinese Academy of Sciences,Guangzhou 510700,China;Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics,Guangzhou 510700,China
7. GBA Branch of Aerospace Information Research Institute,Chinese Academy of Sciences,Guangzhou 510700,China;Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics,Guangzhou 510700,China;University of Chinese Academy of Sciences,Beijing 100039,China
折叠

Abstract

Chalcogenide superlattices Sb2Te3-GeTe is a candidate for interfacial phase-change memory(iPCM)data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy together,we investigate the ultrafast photoexcited carrier dynamics and current transients in Sb2Te3-GeTe superlattices.Sample orientation and excitation polarization dependences of the THz emission confirm that ultrafast thermo-electric,shift and injection currents contribute to the THz generation in Sb2Te3-GeTe superlattices.By decreasing the thickness and increasing the number of GeTe and Sb2Te3 layer,the interlayer coupling can be enhanced,which significantly reduces the contribution from circular photo-galvanic effect(CPGE).A photo-induced bleaching in the transient reflectance spectroscopy probed in the range of～1100 nm to～1400 nm further demonstrates a gapped state resulting from the interlayer coupling.These demonstrates play an important role in the development of iPCM-based high-speed optoelectronic devices.

Key words

Sb2Te3/GeTe superlattices/ultrafast carrier dynamics/interfacial phase change memory/THz emission spectroscopy/transient reflectance spectroscopy

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基金项目

National Key Research and Development Program of China(2023YFF0719200)

National Key Research and Development Program of China(2022YFA1404004)

National Natural Science Foundation of China(62322115)

National Natural Science Foundation of China(61988102)

National Natural Science Foundation of China(61975110)

National Natural Science Foundation of China(62335012)

National Natural Science Foundation of China(12074248)

111 Project(D18014)

Key Project supported by Science and Technology Commission Shanghai Municipality(YDZX20193100004960)

Science and Technology Commission of Shanghai Municipality(22JC1400200)

Science and Technology Commission of Shanghai Municipality(21S31907400)

General Administration of Customs People's Republic of China(2019HK006)

出版年

2024

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

参考文献量57

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