Abstract
We conduct a detailed examination of the magnetic and electrical transport properties in GdAlSi and SmAlGe crys-tals,which possess a LaPtSi-type structure(space group I41md).The magnetic susceptibility data unambiguously reveal magnetic ordering below a characteristic transition temperature(TN).For GdAlSi,a hysteresis loop is observed in the mag-netization and magnetoresistance curves within the ab plane when the magnetic field is applied below TN,which is around 32 K.Notable specific heat anomalies are detected at 32 K for GdAISi and 6 K for SmAlGe,confirming the occurrence of magnetic transitions.In addition,the extracted magnetic entropy at high temperatures is consistent with the theoretical value of Rln(2J+1)for J=7/2 in Gd3+and J=5/2 in Sm3+,respectively.SmAlGe also exhibits Schottky-like specific heat contributions.Additionally,both GdAlSi and SmAlGe exhibit positive magnetoresistance and a normal Hall effect.
基金项目
National Natural Science Foundation of China(12074425)
National Key R&D Program of China(2019YFA0308602)
Fundamental Research Funds for the Central Universities()
Research Funds of Renmin University of China(23XNKJ22)
NETL
NSTL
万方数据