首页|Magnetic and electrical transport properties in GdAlSi and SmAlGe
Magnetic and electrical transport properties in GdAlSi and SmAlGe
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We conduct a detailed examination of the magnetic and electrical transport properties in GdAlSi and SmAlGe crys-tals,which possess a LaPtSi-type structure(space group I41md).The magnetic susceptibility data unambiguously reveal magnetic ordering below a characteristic transition temperature(TN).For GdAlSi,a hysteresis loop is observed in the mag-netization and magnetoresistance curves within the ab plane when the magnetic field is applied below TN,which is around 32 K.Notable specific heat anomalies are detected at 32 K for GdAISi and 6 K for SmAlGe,confirming the occurrence of magnetic transitions.In addition,the extracted magnetic entropy at high temperatures is consistent with the theoretical value of Rln(2J+1)for J=7/2 in Gd3+and J=5/2 in Sm3+,respectively.SmAlGe also exhibits Schottky-like specific heat contributions.Additionally,both GdAlSi and SmAlGe exhibit positive magnetoresistance and a normal Hall effect.
Department of Physics,Renmin University of China,Beijing 100872,China
Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices,Renmin University of China,Beijing 100872,China
Key Laboratory of Quantum State Construction and Manipulation(Ministry of Education),Renmin University of China,Beijing 100872,China
Laboratory for Neutron Scattering,Renmin University of China,Beijing 100872,China
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National Natural Science Foundation of ChinaNational Key R&D Program of ChinaFundamental Research Funds for the Central UniversitiesResearch Funds of Renmin University of China
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