首页|Controlled fabrication of freestanding monolayer SiC by electron irradiation

Controlled fabrication of freestanding monolayer SiC by electron irradiation

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The design and preparation of novel quantum materials with atomic precision are crucial for exploring new physics and for device applications.Electron irradiation has been demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise.It features the advantages of precise control over the patterning of such new materials and their integration with other materials with different functionalities.Here,we present a new strategy for fabricating freestanding monolayer SiC within nanopores of a graphene membrane.By regulating the energy of the incident electron beam and the in-situ heating temperature in a scanning transmission electron microscope(STEM),we can effectively control the patterning of nanopores and subsequent growth of monolayer SiC within the graphene lattice.The resultant SiC monolayers seamlessly connect with the graphene lattice,forming a planar structure distinct by a wide direct bandgap.Our in-situ STEM observations further uncover that the growth of monolayer SiC within the graphene nanopore is driven by a combination of bond rotation and atom extrusion,providing new insights into the atom-by-atom self-assembly of freestanding two-dimensional(2D)monolayers.

monolayer SiC2D semiconductorin-situ growthin-situ STEMdefect engineeringgraphene nanopores

笪蕴力、罗瑞春、雷宝、季威、周武

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School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China

Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices,Renmin University of China,Beijing 100872,China

Electron Microscopy Center at the University of Chinese Academy of SciencesMinistry of Science and Technology(MOST)of ChinaBeijing Outstanding Young Scientist ProgramChina National Postdoctoral Program for Innovative TalentsFundamental Research Funds for the Central UniversitiesResearch Funds of Renmin University of China

2018YFE0202700BJJWZYJH01201914430039BX202130122XNKJ30

2024

10.1088/1674-1056/ad6132

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(8)