首页|Deep-subwavelength single grooves prepared by femtosecond laser direct writing on Si

Deep-subwavelength single grooves prepared by femtosecond laser direct writing on Si

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It is well known that femtosecond laser pulses can easily spontaneously induce deep-subwavelength periodic surface structures on transparent dielectrics but not on non-transparent semiconductors.Nevertheless,in this study,we demonstrate that using high-numerical-aperture 800 nm femtosecond laser direct writing with controlled pulse energy and scanning speed in the near-damage-threshold regime,polarization-dependent deep-subwavelength single grooves with linewidths of～180 nm can be controllably prepared on Si.Generally,the single-groove linewidth increases slightly with increase in the pulse energy and decrease in the scanning speed,whereas the single-groove depth significantly increases from～300 nm to～600 nm with decrease in the scanning speed,or even to over 1 μm with multi-processing,indicating the characteristics of transverse clamping and longitudinal growth of such deep-subwavelength single grooves.Energy dispersive spectroscopy composition analysis of the near-groove region confirms that single-groove formation tends to be an ultrafast,non-thermal ablation process,and the oxidized deposits near the grooves are easy to clean up.Furthermore,the results,showing both the strong dependence of groove orientation on laser polarization and the occurrence of double-groove structures due to the interference of pre-formed orthogonal grooves,indicate that the extraordinary field enhancement of strong polariza-tion sensitivity in the deep-subwavelength groove plays an important role in single-groove growth with high stability and collimation.

femtosecond-laser direct writing of Sideep-subwavelength single groovespolarization depen-dencehigh numerical apertureultrafast non-thermal ablation

叶瑞熙、黄敏

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State Key Laboratory of Optoelectronic Materials and Technologies,School of Physics,Sun Yat-sen University,Guangzhou 510275,China

Natural Science Foundation of Guangdong ProvinceNational Natural Science Foundation of ChinaPearl River S&T Nova Program of GuangzhouState Key Laboratory of High Field Laser Physics(Shanghai Institute of Optics and Fine Mechanics)State Key Laboratory of Optoelectronic Materials and Technologies(Sun Yat-Sen University)

2021A151501233511274400201506010059

2024

10.1088/1674-1056/ad4cd6

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(8)