首页|Step-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire

Step-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire

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Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device performance.In this work,the growth mode of α-Ga2O3 heteroepitaxial layers was modulated by tuning miscut angles(θ)from 0° to 7° off the(1010)direction of sapphire(0002)substrate.On flat sapphire surfaces,the growth undergoes a typical three-dimensional(3D)growth mode due to the random nucleation on wide substrate terraces,as evidenced by the hillock morphology and high dislocation densities.As the miscut angle increases to θ=5°,the terrace width of sapphire substrate is comparable to the distance between neighboring nuclei,and consequently,the nucleation is guided by terrace edges,which energetically facilitates the growth mode transition into the desirable two-dimensional(2D)coherent growth.Consequently,the mean surface roughness decreases to only 0.62 nm,accompanied by a significant reduction in screw and edge dislocations to 0.16×107 cm-2 and 3.58×109 cm-2,respectively.However,the further increment of miscut angles to θ=7° shrink the terrace width less than nucleation distance,and the step-bunching growth mode is dominant.In this circumstance,the misfit strain is released in the initial growth stage,resulting in surface morphology degradation and increased dislocation densities.

growth modemiscut anglecrystalline qualitysurface morphology

郝景刚、张彦芳、张贻俊、徐科、韩根全、叶建东

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Test & Analysis Platform,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China

Wuxi Institute of Technology,Wuxi 214121,China

Suzhou National Laboratory for Materials Science,Jiangsu Institute of Advanced Semiconductors,Suzhou 215123,China

School of Microelectronics,Xidian University,Xi'an 710071,China

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National Key Research and Development Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaKey-Area Research and Development Program of Guangdong Province,ChinaCultivation Project for Youth Teachers in Jiangsu ProvinceJiangsu Funding Program for Excellent Postdoctoral Talent

2022YFB36054036223400762241407622935216230423862241407U21A20503U21A20712020B010174002

2024

10.1088/1674-1056/ad4ff6

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(8)