Step-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire

郝景刚 ¹张彦芳 ²张贻俊 ³徐科 ⁴韩根全 ⁵叶建东³

扫码查看

作者信息

1. Test & Analysis Platform,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China
2. School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China;Wuxi Institute of Technology,Wuxi 214121,China
3. School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China
4. Test & Analysis Platform,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;Suzhou National Laboratory for Materials Science,Jiangsu Institute of Advanced Semiconductors,Suzhou 215123,China
5. School of Microelectronics,Xidian University,Xi'an 710071,China;Suzhou National Laboratory for Materials Science,Jiangsu Institute of Advanced Semiconductors,Suzhou 215123,China
折叠

Abstract

Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device performance.In this work,the growth mode of α-Ga2O3 heteroepitaxial layers was modulated by tuning miscut angles(θ)from 0° to 7° off the(1010)direction of sapphire(0002)substrate.On flat sapphire surfaces,the growth undergoes a typical three-dimensional(3D)growth mode due to the random nucleation on wide substrate terraces,as evidenced by the hillock morphology and high dislocation densities.As the miscut angle increases to θ=5°,the terrace width of sapphire substrate is comparable to the distance between neighboring nuclei,and consequently,the nucleation is guided by terrace edges,which energetically facilitates the growth mode transition into the desirable two-dimensional(2D)coherent growth.Consequently,the mean surface roughness decreases to only 0.62 nm,accompanied by a significant reduction in screw and edge dislocations to 0.16×107 cm-2 and 3.58×109 cm-2,respectively.However,the further increment of miscut angles to θ=7° shrink the terrace width less than nucleation distance,and the step-bunching growth mode is dominant.In this circumstance,the misfit strain is released in the initial growth stage,resulting in surface morphology degradation and increased dislocation densities.

Key words

growth mode/miscut angle/crystalline quality/surface morphology

引用本文复制引用

基金项目

National Key Research and Development Program of China(2022YFB3605403)

National Natural Science Foundation of China(62234007)

National Natural Science Foundation of China(62241407)

National Natural Science Foundation of China(62293521)

National Natural Science Foundation of China(62304238)

National Natural Science Foundation of China(62241407)

National Natural Science Foundation of China(U21A20503)

National Natural Science Foundation of China(U21A2071)

Key-Area Research and Development Program of Guangdong Province,China(2020B010174002)

Cultivation Project for Youth Teachers in Jiangsu Province()

Jiangsu Funding Program for Excellent Postdoctoral Talent()

出版年

2024

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

段落导航