Effect of Lewis acid-base additive on lead-free Cs2SnI6 thin film prepared by direct solution coating process

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外文摘要：Inorganic Cs2SnI6 perovskite has exhibited substantial potential for light harvesting due to its exceptional optoelec-tronic properties and remarkable stability in ambient conditions.The charge transport characteristics within perovskite films are subject to modulation by various factors,including crystalline orientation,morphology,and crystalline quality.Achieving preferred crystalline orientation and film morphology via a solution-based process is challenging for Cs2SnI6 films.In this work,we employed thiourea as an additive to optimize crystal orientation,enhance film morphology,promote crystallization,and achieve phase purity.Thiourea lowers the surface energy of the(222)plane along the<111>direction,confirmed by x-ray diffraction,x-ray photoelectron spectroscopy,ultraviolet photoelectron spectroscopy studies,and den-sity functional theory calculations.Varying thiourea concentration enables a bandgap tuning of Cs2SnI6 from 1.52 eV to 1.07 eV.This approach provides a novel method for utilizing Cs2SnI6 films in high-performance optoelectronic devices.

外文关键词：

Cs2SnI6crystalline orientationLewis acid-caseadditive engineeringbandgap engineering

作者：

Saqib Nawaz Khan、王燕、钟李祥、梁会力、杜小龙、梅增霞

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作者单位：

Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

Songshan Lake Materials Laboratory,Dongguan 523808,China

University of Chinese Academy of Sciences,Beijing 100049,China

Beijing Hairou Laboratory,Beijing 101400,China

School of Physics,Beijing Institute of Technology,Beijing 100081,China

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基金：

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaGuangdong Basic and Applied Basic Research Foundation

项目编号：

12174275621741136187413961904201118750882019B1515120057

出版年：

2024

DOI：

10.1088/1674-1056/ad4a39

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

年,卷(期)：2024.33(8)