中国物理B(英文版)2024,Vol.33Issue(8) :451-459.DOI:10.1088/1674-1056/ad4a39

Effect of Lewis acid-base additive on lead-free Cs2SnI6 thin film prepared by direct solution coating process

Saqib Nawaz Khan 王燕 钟李祥 梁会力 杜小龙 梅增霞
中国物理B(英文版)2024,Vol.33Issue(8) :451-459.DOI:10.1088/1674-1056/ad4a39

Effect of Lewis acid-base additive on lead-free Cs2SnI6 thin film prepared by direct solution coating process

Saqib Nawaz Khan 1王燕 2钟李祥 3梁会力 4杜小龙 1梅增霞4
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作者信息

  • 1. Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Songshan Lake Materials Laboratory,Dongguan 523808,China;University of Chinese Academy of Sciences,Beijing 100049,China
  • 2. Beijing Hairou Laboratory,Beijing 101400,China
  • 3. School of Physics,Beijing Institute of Technology,Beijing 100081,China
  • 4. Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Songshan Lake Materials Laboratory,Dongguan 523808,China
  • 折叠

Abstract

Inorganic Cs2SnI6 perovskite has exhibited substantial potential for light harvesting due to its exceptional optoelec-tronic properties and remarkable stability in ambient conditions.The charge transport characteristics within perovskite films are subject to modulation by various factors,including crystalline orientation,morphology,and crystalline quality.Achieving preferred crystalline orientation and film morphology via a solution-based process is challenging for Cs2SnI6 films.In this work,we employed thiourea as an additive to optimize crystal orientation,enhance film morphology,promote crystallization,and achieve phase purity.Thiourea lowers the surface energy of the(222)plane along the<111>direction,confirmed by x-ray diffraction,x-ray photoelectron spectroscopy,ultraviolet photoelectron spectroscopy studies,and den-sity functional theory calculations.Varying thiourea concentration enables a bandgap tuning of Cs2SnI6 from 1.52 eV to 1.07 eV.This approach provides a novel method for utilizing Cs2SnI6 films in high-performance optoelectronic devices.

Key words

Cs2SnI6/crystalline orientation/Lewis acid-case/additive engineering/bandgap engineering

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基金项目

National Natural Science Foundation of China(12174275)

National Natural Science Foundation of China(62174113)

National Natural Science Foundation of China(61874139)

National Natural Science Foundation of China(61904201)

National Natural Science Foundation of China(11875088)

Guangdong Basic and Applied Basic Research Foundation(2019B1515120057)

出版年

2024
中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子:0.995
ISSN:1674-1056
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