中国物理B(英文版)2024,Vol.33Issue(8) :498-504.DOI:10.1088/1674-1056/ad4a3b

Evolution of anomalous Hall effect in ferromagnetic Weyl semimetal NbxZr1-xCo2Sn

陈博文 沈冰
中国物理B(英文版)2024,Vol.33Issue(8) :498-504.DOI:10.1088/1674-1056/ad4a3b

Evolution of anomalous Hall effect in ferromagnetic Weyl semimetal NbxZr1-xCo2Sn

陈博文 1沈冰1
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作者信息

  • 1. Center for Neutron Science and Technology,Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices,School of Physics,Sun Yat-Sen University,Guangzhou 510275,China;State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275,China
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Abstract

Magnetic topological semimetal can host various topological non-trivial states leading to exotic novel transport prop-erties.Here we report the systematic magneto-transport studies on the Heusler alloy NbxZr1-xCo2Sn considered as a ferromagnetic(FM)Weyl semimetal.The cusp anomaly of temperature-dependent resistivity and large isotropic negative magneto-resistivity(MR)emerge around the FM transition consistent with the theoretical half-metallic predictions.The prominent anomalous Hall effect(AHE)has the same behavior with the applied field along various crystal directions.The Nb doping introduces more disorder resulting in the enhancement of the upturn for the temperature-dependent resistivity in low temperatures.With Nb doping,the AHE exhibits systemic evolution with the Fermi level lifted.At the doping level of x=0.25,the AHE mainly originates from the intrinsic contribution related to non-trivial topological Weyl states.

Key words

anomalous Hall effect/magnetic Weyl semimetal/ferromagnetism

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基金项目

National Key Research and Development Program of China(2023YFF0718400)

National Key Research and Development Program of China(2023YFA1406500)

National Natural Science Foundation of China(U2130101)

National Natural Science Foundation of China(92165204)

Natural Science Foundation of Guangdong Province,China(2022A1515010035)

Open Project of Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices(2022B1212010008)

Open Project of Key Laboratory of Optoelectronic Materials and Technologies(OEMT-2023-ZTS-01)

出版年

2024
中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子:0.995
ISSN:1674-1056
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